Справочник MOSFET. NCE65N680D

 

NCE65N680D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE65N680D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 81 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.7 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 6.7 ns
   Cossⓘ - Выходная емкость: 15 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.68 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для NCE65N680D

 

 

NCE65N680D Datasheet (PDF)

 ..1. Size:640K  ncepower
 nce65n680d.pdf

NCE65N680D NCE65N680D

NCE65N680DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

 5.1. Size:693K  ncepower
 nce65n680f.pdf

NCE65N680D NCE65N680D

NCE65N680FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

 5.2. Size:675K  ncepower
 nce65n680r.pdf

NCE65N680D NCE65N680D

NCE65N680RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

 5.3. Size:623K  ncepower
 nce65n680k.pdf

NCE65N680D NCE65N680D

NCE65N680KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

 5.4. Size:621K  ncepower
 nce65n680i.pdf

NCE65N680D NCE65N680D

NCE65N680IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 600 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.7 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13.5 nCpower conversion, and indust

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top