NCE65N680D datasheet, аналоги, основные параметры

Наименование производителя: NCE65N680D  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 81 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.7 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6.7 ns

Cossⓘ - Выходная емкость: 15 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.68 Ohm

Тип корпуса: TO-263

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Аналог (замена) для NCE65N680D

- подборⓘ MOSFET транзистора по параметрам

 

NCE65N680D даташит

 ..1. Size:640K  ncepower
 nce65n680d.pdf pdf_icon

NCE65N680D

NCE65N680D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.7 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.5 nC power conversion, and indust

 5.1. Size:693K  ncepower
 nce65n680f.pdf pdf_icon

NCE65N680D

NCE65N680F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.7 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.5 nC power conversion, and indust

 5.2. Size:675K  ncepower
 nce65n680r.pdf pdf_icon

NCE65N680D

NCE65N680R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.7 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.5 nC power conversion, and indust

 5.3. Size:623K  ncepower
 nce65n680k.pdf pdf_icon

NCE65N680D

NCE65N680K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.7 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.5 nC power conversion, and indust

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