FQD8P10 Todos los transistores

 

FQD8P10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQD8P10
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 12 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.53 Ohm
   Paquete / Cubierta: TO252 DPAK
 

 Búsqueda de reemplazo de FQD8P10 MOSFET

   - Selección ⓘ de transistores por parámetros

 

FQD8P10 Datasheet (PDF)

 ..1. Size:705K  fairchild semi
 fqd8p10tf fqd8p10tm fqd8p10 fqu8p10 fqu8p10tu.pdf pdf_icon

FQD8P10

TMQFETFQD8P10 / FQU8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored

 0.1. Size:640K  fairchild semi
 fqd8p10tm f085.pdf pdf_icon

FQD8P10

December 2010FQD8P10TM_F085100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailor

 0.2. Size:673K  onsemi
 fqd8p10tm-f085.pdf pdf_icon

FQD8P10

FQD8P10TM-F085Features100V P-Channel MOSFET -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 V Low gate charge ( typical 12 nC)General Description Low Crss ( typical 30 pF)These P-Channel enhancement mode power field effect Fast switchingtransistors are produced using ON Semiconductors 100% avalanche testedproprietary, planar stripe, DMOS technology. Imp

Otros transistores... FQD6N50C , FQD7N10L , HUFA75645S3S , FQD7N20L , IRFS450B , FQD7N30 , FQD7P06 , FQD7P20 , BS170 , FQD8P10TMF085 , FQD9N25 , FQD9N25TMF085 , FQH44N10 , FDS4480 , FQH8N100C , FQI13N50C , FQI27N25 .

History: FDC6318P | IRFW450 | ATP103 | STH15N50 | SSM3J118TU | NTD4810N

 

 
Back to Top

 


 
.