All MOSFET. FQD8P10 Datasheet

 

FQD8P10 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD8P10

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 44 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 12 nC

Maximum Drain-Source On-State Resistance (Rds): 0.53 Ohm

Package: TO252 DPAK

FQD8P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD8P10 Datasheet (PDF)

0.1. fqd8p10tm f085.pdf Size:640K _fairchild_semi

FQD8P10
FQD8P10

December 2010FQD8P10TM_F085100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailor

0.2. fqd8p10tf fqd8p10tm fqd8p10 fqu8p10 fqu8p10tu.pdf Size:705K _fairchild_semi

FQD8P10
FQD8P10

TMQFETFQD8P10 / FQU8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored

 

Datasheet: FQD6N50C , FQD7N10L , HUFA75645S3S , FQD7N20L , IRFS450B , FQD7N30 , FQD7P06 , FQD7P20 , APT50M38JFLL , FQD8P10TM_F085 , FQD9N25 , FQD9N25TM_F085 , FQH44N10 , FDS4480 , FQH8N100C , FQI13N50C , FQI27N25 .

 

 
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