NCE65NF130F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65NF130F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 26 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 95 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de NCE65NF130F MOSFET
NCE65NF130F datasheet
nce65nf130f.pdf
NCE65NF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, A
nce65nf130ll.pdf
NCE65NF130LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC,
nce65nf130.pdf
NCE65NF130 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, AC
nce65nf130d.pdf
NCE65NF130D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, A
Otros transistores... NCE60P82AF , NCE65N680D , NCE65N680F , NCE65N680I , NCE65N680K , NCE65N680R , NCE65NF130 , NCE65NF130D , AOD4184A , NCE65NF130LL , NCE65NF130T , NCE65NF130V , NCE70N290T , NCE70N380T , NCE8205B , NCE8205T , NCE8601B .
History: AUIRLR3410TRL | NCEP11N10AS | BF1101
History: AUIRLR3410TRL | NCEP11N10AS | BF1101
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOK065V65X2 | AOK065V120X2 | AOK033V120X2Q | AOK033V120X2 | AOB380A60L | AOB29S50L | AO3481C | AO3480 | APG068N04Q | APG068N04G | APG060N85D | APG054N10D | APG054N10 | APG050N85D | APG050N85 | APG046N01G
Popular searches
7506 mosfet | irlr8726 datasheet | ru7088r mosfet | mp40 transistor | fgpf4636 datasheet | 2sc1945 | c2383 | 2sb681

