NCE65NF130T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65NF130T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 237 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 26 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 95 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de NCE65NF130T MOSFET
NCE65NF130T Datasheet (PDF)
nce65nf130t.pdf

NCE65NF130TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 110 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 26 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, A
nce65nf130ll.pdf

NCE65NF130LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 110 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 26 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC,
nce65nf130f.pdf

NCE65NF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 110 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 26 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, A
nce65nf130.pdf

NCE65NF130N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 110 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 26 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, AC
Otros transistores... NCE65N680F , NCE65N680I , NCE65N680K , NCE65N680R , NCE65NF130 , NCE65NF130D , NCE65NF130F , NCE65NF130LL , IRFB7545 , NCE65NF130V , NCE70N290T , NCE70N380T , NCE8205B , NCE8205T , NCE8601B , NCE8651Q , NCEA2309 .
History: PMZB950UPE | IXTP7N50 | APL502B2G | NTP125N02RG | NTP13N10 | AP9560GH-HF | 2SK1724
History: PMZB950UPE | IXTP7N50 | APL502B2G | NTP125N02RG | NTP13N10 | AP9560GH-HF | 2SK1724



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