NCE65NF130T. Аналоги и основные параметры
Наименование производителя: NCE65NF130T
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 237 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 26 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 95 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
Тип корпуса: TO-247
Аналог (замена) для NCE65NF130T
- подборⓘ MOSFET транзистора по параметрам
NCE65NF130T даташит
nce65nf130t.pdf
NCE65NF130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, A
nce65nf130ll.pdf
NCE65NF130LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC,
nce65nf130f.pdf
NCE65NF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, A
nce65nf130.pdf
NCE65NF130 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 110 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 26 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, AC
Другие MOSFET... NCE65N680F , NCE65N680I , NCE65N680K , NCE65N680R , NCE65NF130 , NCE65NF130D , NCE65NF130F , NCE65NF130LL , 60N06 , NCE65NF130V , NCE70N290T , NCE70N380T , NCE8205B , NCE8205T , NCE8601B , NCE8651Q , NCEA2309 .
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Список транзисторов
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