FQD8P10TM_F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQD8P10TM_F085
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 44 W
Tensión drenaje-fuente (Vds): 100 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 6.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 12 nC
Resistencia drenaje-fuente RDS(on): 0.53 Ohm
Empaquetado / Estuche: TO252_DPAK
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FQD8P10TM_F085 Datasheet (PDF)
1.1. fqd8p10tf fqd8p10tm.pdf 
Size:705K _fairchild_semi
TM QFET FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -6.6A, -100V, RDS(on) = 0.53Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially tailored
1.2. fqd8p10tm f085.pdf Size:640K _fairchild_semi
December 2010 FQD8P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -6.6A, -100V, RDS(on) = 0.53Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially tailor
3.1. fqd8p10 fqu8p10.pdf Size:705K _fairchild_semi
TM QFET FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored to Fast s
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