All MOSFET. FQD8P10TM_F085 Datasheet

 

FQD8P10TM_F085 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD8P10TM_F085

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 44 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 12 nC

Maximum Drain-Source On-State Resistance (Rds): 0.53 Ohm

Package: TO252, DPAK

FQD8P10TM_F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD8P10TM_F085 Datasheet (PDF)

0.1. fqd8p10tm f085.pdf Size:640K _fairchild_semi

FQD8P10TM_F085 FQD8P10TM_F085

December 2010 FQD8P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -6.6A, -100V, RDS(on) = 0.53Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially tailor

3.1. fqd8p10tf fqd8p10tm fqd8p10 fqu8p10 fqu8p10tu.pdf Size:705K _fairchild_semi

FQD8P10TM_F085 FQD8P10TM_F085

TM QFET FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -6.6A, -100V, RDS(on) = 0.53Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially tailored

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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