All MOSFET. FQD8P10TMF085 Datasheet

 

FQD8P10TMF085 Datasheet and Replacement


   Type Designator: FQD8P10TMF085
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
   Package: TO252 DPAK
 

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FQD8P10TMF085 Datasheet (PDF)

 5.1. Size:640K  fairchild semi
 fqd8p10tm f085.pdf pdf_icon

FQD8P10TMF085

December 2010FQD8P10TM_F085100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailor

 5.2. Size:705K  fairchild semi
 fqd8p10tf fqd8p10tm fqd8p10 fqu8p10 fqu8p10tu.pdf pdf_icon

FQD8P10TMF085

TMQFETFQD8P10 / FQU8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored

 5.3. Size:673K  onsemi
 fqd8p10tm-f085.pdf pdf_icon

FQD8P10TMF085

FQD8P10TM-F085Features100V P-Channel MOSFET -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 V Low gate charge ( typical 12 nC)General Description Low Crss ( typical 30 pF)These P-Channel enhancement mode power field effect Fast switchingtransistors are produced using ON Semiconductors 100% avalanche testedproprietary, planar stripe, DMOS technology. Imp

Datasheet: FQD7N10L , HUFA75645S3S , FQD7N20L , IRFS450B , FQD7N30 , FQD7P06 , FQD7P20 , FQD8P10 , IRFZ44N , FQD9N25 , FQD9N25TMF085 , FQH44N10 , FDS4480 , FQH8N100C , FQI13N50C , FQI27N25 , FQI27N25TUF085 .

History: APQ02SN65AA

Keywords - FQD8P10TMF085 MOSFET datasheet

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