FQD8P10TM_F085 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQD8P10TM_F085
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 44 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 6.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 12 nC
Maximum Drain-Source On-State Resistance (Rds): 0.53 Ohm
FQD8P10TM_F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQD8P10TM_F085 Datasheet (PDF)
0.1. fqd8p10tm f085.pdf 
Size:640K _fairchild_semi
December 2010FQD8P10TM_F085100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailor
3.1. fqd8p10tf fqd8p10tm fqd8p10 fqu8p10 fqu8p10tu.pdf Size:705K _fairchild_semi
TMQFETFQD8P10 / FQU8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored
Datasheet: FQD7N10L , HUFA75645S3S , FQD7N20L , IRFS450B , FQD7N30 , FQD7P06 , FQD7P20 , FQD8P10 , IRF3205 , FQD9N25 , FQD9N25TM_F085 , FQH44N10 , FDS4480 , FQH8N100C , FQI13N50C , FQI27N25 , FQI27N25TU_F085 .
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MOSFET: IPB17N25S3-100 | IPB160N04S4L-H1 | IPB140N08S4-04 | IPB120P04P4-04 | IPB120N08S4-04 | IPB120N08S4-03 | IPB120N04S4L-02 | IPB120N04S4-04 | IPB120N03S4L-03 | IPB110P06LM | IPB060N15N5 | IPB032N10N5 | IPB024N10N5 | IPB019N08N5 | IPB017N10N5LF | IPAW70R950CE