FQD8P10TMF085 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQD8P10TMF085
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 6.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
Package: TO252 DPAK
FQD8P10TMF085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQD8P10TMF085 Datasheet (PDF)
fqd8p10tm f085.pdf
December 2010FQD8P10TM_F085100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailor
fqd8p10tf fqd8p10tm fqd8p10 fqu8p10 fqu8p10tu.pdf
TMQFETFQD8P10 / FQU8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored
fqd8p10tm-f085.pdf
FQD8P10TM-F085Features100V P-Channel MOSFET -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 V Low gate charge ( typical 12 nC)General Description Low Crss ( typical 30 pF)These P-Channel enhancement mode power field effect Fast switchingtransistors are produced using ON Semiconductors 100% avalanche testedproprietary, planar stripe, DMOS technology. Imp
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