NCE8205B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE8205B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 6.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 220 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm
Encapsulados: TSSOP-8
Búsqueda de reemplazo de NCE8205B MOSFET
- Selecciónⓘ de transistores por parámetros
NCE8205B datasheet
nce8205b.pdf
Pb Free Product http //www.ncepower.com NCE8205B NCE N-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Gen
nce8205t.pdf
Pb Free Product http //www.ncepower.com NCE8205t NCE N-Channel Enhancement Mode Power MOSFET D1 D2 Description G1 G2 The NCE8205t uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2 voltages as low as 2.5V. This device is suitable for use as a Schematic diagram Battery protection or in other Switching application. Gen
nce8205a.pdf
Pb Free Product http //www.ncepower.com NCE8205A NCE N-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE8205A uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Gener
nce8205.pdf
Pb Free Product http //www.ncepower.com NCE8205 NCE N-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE8205 uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Gener
Otros transistores... NCE65NF130, NCE65NF130D, NCE65NF130F, NCE65NF130LL, NCE65NF130T, NCE65NF130V, NCE70N290T, NCE70N380T, IRFZ44N, NCE8205T, NCE8601B, NCE8651Q, NCEA2309, NCEA75H25, NCEAP020N60GU, NCEAP055N12D, NCEAP4075GU
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