NCE8205B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE8205B
   Código: 8205B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 12 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm
   Paquete / Cubierta: TSSOP-8

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NCE8205B Datasheet (PDF)

..1. Size:339K ncepower
nce8205b.pdf

Pb Free Producthttp://www.ncepower.com NCE8205BNCE N-Channel Enhancement Mode Power MOSFET Description D1D2The NCE8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Gen

7.1. Size:299K ncepower
nce8205t.pdf

Pb Free Producthttp://www.ncepower.com NCE8205tNCE N-Channel Enhancement Mode Power MOSFET D1D2Description G1 G2The NCE8205t uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2voltages as low as 2.5V. This device is suitable for use as a Schematic diagram Battery protection or in other Switching application. Gen

7.2. Size:403K ncepower
nce8205a.pdf

Pb Free Producthttp://www.ncepower.com NCE8205ANCE N-Channel Enhancement Mode Power MOSFET D1D2Description The NCE8205A uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Gener

7.3. Size:443K ncepower
nce8205.pdf

Pb Free Producthttp://www.ncepower.com NCE8205NCE N-Channel Enhancement Mode Power MOSFET D1D2Description The NCE8205 uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Gener

7.4. Size:316K ncepower
nce8205i.pdf

Pb Free Producthttp://www.ncepower.com NCE8205iNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8205i uses advanced trench technology to provide D1D2excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Gen

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