NCE8205B MOSFET Datasheet: N-Ch, 20V, 6.5A. Full specification with pinout and replacement list

NCE8205B Specs and Replacement

Type Designator: NCE8205B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: TSSOP-8

NCE8205B substitution

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NCE8205B datasheet

..1. Size:339K ncepower
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Pb Free Product http //www.ncepower.com NCE8205B NCE N-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Gen... See More ⇒

7.1. Size:299K ncepower
nce8205t.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE8205t NCE N-Channel Enhancement Mode Power MOSFET D1 D2 Description G1 G2 The NCE8205t uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2 voltages as low as 2.5V. This device is suitable for use as a Schematic diagram Battery protection or in other Switching application. Gen... See More ⇒

7.2. Size:403K ncepower
nce8205a.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE8205A NCE N-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE8205A uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Gener... See More ⇒

7.3. Size:443K ncepower
nce8205.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE8205 NCE N-Channel Enhancement Mode Power MOSFET D1 D2 Description The NCE8205 uses advanced trench technology to provide G1 G2 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Gener... See More ⇒