NCEAP020N60GU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEAP020N60GU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 245 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 230 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 1015 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
Encapsulados: PDFN5X6-8L
Búsqueda de reemplazo de NCEAP020N60GU MOSFET
- Selecciónⓘ de transistores por parámetros
NCEAP020N60GU datasheet
nceap020n60gu.pdf
http //www.ncepower.com NCEAP020N60GU NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP020N60GU uses Super Trench II technology that is V =60V,I =230A DS D uniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate
nceap020n10ll.pdf
NCEAP020N10LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =330A DS D uniquely optimized to provide the most efficient high frequency R =1.5m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent g
nceap020n85ll.pdf
NCEAP020N85LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =295A DS D uniquely optimized to provide the most efficient high frequency R =1.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent ga
nceap023n10ll.pdf
NCEAP023N10LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =300A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product(FOM
Otros transistores... NCE70N290T, NCE70N380T, NCE8205B, NCE8205T, NCE8601B, NCE8651Q, NCEA2309, NCEA75H25, IRF540, NCEAP055N12D, NCEAP4075GU, NCEAP60P90AK, NCEP008NH40ASL, NCEP008NH40SL, NCEP013NH40GU, NCEP014NH60GU, NCEP015N85LL
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