All MOSFET. NCEAP020N60GU Datasheet

 

NCEAP020N60GU Datasheet and Replacement


   Type Designator: NCEAP020N60GU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 230 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 1015 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: PDFN5X6-8L
 

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NCEAP020N60GU Datasheet (PDF)

 ..1. Size:967K  ncepower
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NCEAP020N60GU

http://www.ncepower.comNCEAP020N60GUNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP020N60GU uses Super Trench II technology that is V =60V,I =230ADS Duniquely optimized to provide the most efficient high frequencyR =1.8 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate

 5.1. Size:747K  ncepower
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NCEAP020N60GU

NCEAP020N10LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =330ADS Duniquely optimized to provide the most efficient high frequencyR =1.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent g

 5.2. Size:542K  ncepower
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NCEAP020N60GU

NCEAP020N85LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =295ADS Duniquely optimized to provide the most efficient high frequencyR =1.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent ga

 7.1. Size:793K  ncepower
 nceap023n10ll.pdf pdf_icon

NCEAP020N60GU

NCEAP023N10LLNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =300ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product(FOM

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Datasheet: NCE70N290T , NCE70N380T , NCE8205B , NCE8205T , NCE8601B , NCE8651Q , NCEA2309 , NCEA75H25 , IRF540N , NCEAP055N12D , NCEAP4075GU , NCEAP60P90AK , NCEP008NH40ASL , NCEP008NH40SL , NCEP013NH40GU , NCEP014NH60GU , NCEP015N85LL .

History: IPP120N04S3-02

Keywords - NCEAP020N60GU MOSFET datasheet

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