NCEAP055N12D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEAP055N12D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 200 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 128 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 13 nS
Cossⓘ - Capacitancia de salida: 380 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de NCEAP055N12D MOSFET
- Selecciónⓘ de transistores por parámetros
NCEAP055N12D datasheet
..1. Size:714K ncepower
nceap055n12d.pdf 
http //www.ncepower.com NCEAP055N12D NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =120V,I =128A DS D uniquely optimized to provide the most efficient high frequency R =5.0m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gat
8.1. Size:747K ncepower
nceap020n10ll.pdf
NCEAP020N10LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =330A DS D uniquely optimized to provide the most efficient high frequency R =1.5m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent g
8.2. Size:548K ncepower
nceap0178ak.pdf
http //www.ncepower.com NCEAP0178AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency switc
8.3. Size:704K ncepower
nceap01p35ak.pdf
http //www.ncepower.com NCEAP01P35AK NCE Automotive P-Channel Super Trench Power MOSFET Description The NCEAP01P35AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency sw
8.4. Size:692K ncepower
nceap016n60vd.pdf
http //www.ncepower.com NCEAP016N60VD NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP016N60VD uses Super Trench II technology that is V =60V,I =315A(Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.1m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power
8.5. Size:693K ncepower
nceap035n85gu.pdf
http //www.ncepower.com NCEAP035N85GU NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP035N85GU uses Super Trench II technology that is V =85V,I =180A DS D uniquely optimized to provide the most efficient high frequency R =2.7m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate ch
8.6. Size:542K ncepower
nceap020n85ll.pdf
NCEAP020N85LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =295A DS D uniquely optimized to provide the most efficient high frequency R =1.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent ga
8.7. Size:621K ncepower
nceap030n85ll.pdf
http //www.ncepower.com NCEAP030N85LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =2.65m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent g
8.8. Size:660K ncepower
nceap0135ak.pdf
http //www.ncepower.com NCEAP0135AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP0135AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . DS(ON) g This device is ideal for high-frequ
8.9. Size:595K ncepower
nceap018n85ll.pdf
http //www.ncepower.com NCEAP018N85LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP018N85LL uses Super Trench II technology that is V =85V,I =330A DS D uniquely optimized to provide the most efficient high frequency R =1.3m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate c
8.10. Size:815K ncepower
nceap018n60gu.pdf
NCEAP018N60GU http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP018N60GU uses Super Trench II technology that is V =60V,I =256A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.6 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power E
8.11. Size:597K ncepower
nceap016n10ll.pdf
http //www.ncepower.com NCEAP016N10LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =385A DS D uniquely optimized to provide the most efficient high frequency R =1.2m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate
8.12. Size:934K ncepower
nceap016n85ll.pdf
NCEAP016N85LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =385A DS D uniquely optimized to provide the most efficient high frequency R =1.2m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses Excel
8.13. Size:793K ncepower
nceap023n10ll.pdf
NCEAP023N10LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =300A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product(FOM
8.14. Size:967K ncepower
nceap020n60gu.pdf
http //www.ncepower.com NCEAP020N60GU NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP020N60GU uses Super Trench II technology that is V =60V,I =230A DS D uniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate
8.15. Size:822K ncepower
nceap018n60agu.pdf
NCEAP018N60AGU http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET General Features Description V =60V,I =270A (Silicon Limited) DS D The NCEAP018N60AGU uses Super Trench II technology that is R =1.4 m (typical) @ V =10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =4.5V DS(ON) GS switching perfor
8.16. Size:395K ncepower
nceap026n10t.pdf
http //www.ncepower.com NCEAP026N10T NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP026N10T uses Super Trench II technology that is V =100V,I =245A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.15m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power
8.17. Size:436K ncepower
nceap025n60ag.pdf
http //www.ncepower.com NCEAP025N60AG NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP025N60AG uses Super Trench II technology that is V =60V,I =185A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.5m
8.18. Size:583K ncepower
nceap01nd35ag.pdf
http //www.ncepower.com NCEAP01ND35AG NCE N-Channel Super Trench Power MOSFET Description General Features The NCEAP01ND35AG uses Super Trench technology that is V =100V,I =35A DS D uniquely optimized to provide the most efficient high frequency R =24m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =27m (typical) @ V =4.5V DS(ON) GS lo
8.19. Size:493K ncepower
nceap028n85d.pdf
NCEAP028N85D http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP028N85D uses Super Trench II technology that is V =85V,I =220A DS D uniquely optimized to provide the most efficient high frequency R =2.4m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate cha
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