NCEAP055N12D MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEAP055N12D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 128 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 92 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 380 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO-263
NCEAP055N12D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEAP055N12D Datasheet (PDF)
nceap055n12d.pdf
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http://www.ncepower.comNCEAP055N12DNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =128ADS Duniquely optimized to provide the most efficient high frequencyR =5.0m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gat
nceap020n10ll.pdf
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NCEAP020N10LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =330ADS Duniquely optimized to provide the most efficient high frequencyR =1.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent g
nceap0178ak.pdf
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http://www.ncepower.com NCEAP0178AKNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP0178AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequency switc
nceap01p35ak.pdf
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http://www.ncepower.comNCEAP01P35AKNCE Automotive P-Channel Super Trench Power MOSFETDescriptionThe NCEAP01P35AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequency sw
nceap016n60vd.pdf
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http://www.ncepower.comNCEAP016N60VDNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP016N60VD uses Super Trench II technology that is V =60V,I =315A(Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.1m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power
nceap035n85gu.pdf
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http://www.ncepower.com NCEAP035N85GUNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP035N85GU uses Super Trench II technology that is V =85V,I =180ADS Duniquely optimized to provide the most efficient high frequencyR =2.7m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate ch
nceap020n85ll.pdf
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NCEAP020N85LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =295ADS Duniquely optimized to provide the most efficient high frequencyR =1.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent ga
nceap030n85ll.pdf
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http://www.ncepower.comNCEAP030N85LLNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =210ADS Duniquely optimized to provide the most efficient high frequencyR =2.65m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent g
nceap0135ak.pdf
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http://www.ncepower.com NCEAP0135AKNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP0135AK uses Super Trench technology that is uniquelyoptimized to provide the most efficient high frequency switchingperformance. Both conduction and switching power losses areminimized due to an extremely low combination of R and Q .DS(ON) gThis device is ideal for high-frequ
nceap018n85ll.pdf
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http://www.ncepower.comNCEAP018N85LLNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP018N85LL uses Super Trench II technology that is V =85V,I =330ADS Duniquely optimized to provide the most efficient high frequencyR =1.3m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate c
nceap018n60gu.pdf
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NCEAP018N60GUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEAP018N60GU uses Super Trench II technology that is V =60V,I =256A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =1.6 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power E
nceap016n10ll.pdf
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http://www.ncepower.comNCEAP016N10LLNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =385ADS Duniquely optimized to provide the most efficient high frequency R =1.2m, typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate
nceap016n85ll.pdf
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NCEAP016N85LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =385ADS Duniquely optimized to provide the most efficient high frequencyR =1.2m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses Excel
nceap023n10ll.pdf
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NCEAP023N10LLNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =300ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product(FOM
nceap020n60gu.pdf
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http://www.ncepower.comNCEAP020N60GUNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP020N60GU uses Super Trench II technology that is V =60V,I =230ADS Duniquely optimized to provide the most efficient high frequencyR =1.8 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate
nceap018n60agu.pdf
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NCEAP018N60AGUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETGeneral FeaturesDescription V =60V,I =270A (Silicon Limited)DS DThe NCEAP018N60AGU uses Super Trench II technology that isR =1.4 m (typical) @ V =10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =1.8 m (typical) @ V =4.5VDS(ON) GSswitching perfor
nceap026n10t.pdf
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http://www.ncepower.com NCEAP026N10TNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP026N10T uses Super Trench II technology that is V =100V,I =245A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =2.15m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power
nceap025n60ag.pdf
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http://www.ncepower.com NCEAP025N60AGNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEAP025N60AG uses Super Trench II technology that is V =60V,I =185A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =2.5m
nceap01nd35ag.pdf
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http://www.ncepower.com NCEAP01ND35AGNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP01ND35AG uses Super Trench technology that is V =100V,I =35ADS Duniquely optimized to provide the most efficient high frequency R =24m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =27m (typical) @ V =4.5VDS(ON) GSlo
nceap028n85d.pdf
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NCEAP028N85Dhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP028N85D uses Super Trench II technology that is V =85V,I =220ADS Duniquely optimized to provide the most efficient high frequencyR =2.4m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate cha
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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