NCEAP055N12D Specs and Replacement
Type Designator: NCEAP055N12D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 128 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ -
Output Capacitance: 380 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO-263
NCEAP055N12D substitution
- MOSFET ⓘ Cross-Reference Search
NCEAP055N12D datasheet
..1. Size:714K ncepower
nceap055n12d.pdf 
http //www.ncepower.com NCEAP055N12D NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =120V,I =128A DS D uniquely optimized to provide the most efficient high frequency R =5.0m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gat... See More ⇒
8.1. Size:747K ncepower
nceap020n10ll.pdf
NCEAP020N10LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =330A DS D uniquely optimized to provide the most efficient high frequency R =1.5m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent g... See More ⇒
8.2. Size:548K ncepower
nceap0178ak.pdf
http //www.ncepower.com NCEAP0178AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency switc... See More ⇒
8.3. Size:704K ncepower
nceap01p35ak.pdf
http //www.ncepower.com NCEAP01P35AK NCE Automotive P-Channel Super Trench Power MOSFET Description The NCEAP01P35AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency sw... See More ⇒
8.4. Size:692K ncepower
nceap016n60vd.pdf
http //www.ncepower.com NCEAP016N60VD NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP016N60VD uses Super Trench II technology that is V =60V,I =315A(Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.1m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power ... See More ⇒
8.5. Size:693K ncepower
nceap035n85gu.pdf
http //www.ncepower.com NCEAP035N85GU NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP035N85GU uses Super Trench II technology that is V =85V,I =180A DS D uniquely optimized to provide the most efficient high frequency R =2.7m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate ch... See More ⇒
8.6. Size:542K ncepower
nceap020n85ll.pdf
NCEAP020N85LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =295A DS D uniquely optimized to provide the most efficient high frequency R =1.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent ga... See More ⇒
8.7. Size:621K ncepower
nceap030n85ll.pdf
http //www.ncepower.com NCEAP030N85LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =2.65m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent g... See More ⇒
8.8. Size:660K ncepower
nceap0135ak.pdf
http //www.ncepower.com NCEAP0135AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP0135AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . DS(ON) g This device is ideal for high-frequ... See More ⇒
8.9. Size:595K ncepower
nceap018n85ll.pdf
http //www.ncepower.com NCEAP018N85LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP018N85LL uses Super Trench II technology that is V =85V,I =330A DS D uniquely optimized to provide the most efficient high frequency R =1.3m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate c... See More ⇒
8.10. Size:815K ncepower
nceap018n60gu.pdf
NCEAP018N60GU http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP018N60GU uses Super Trench II technology that is V =60V,I =256A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.6 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power E... See More ⇒
8.11. Size:597K ncepower
nceap016n10ll.pdf
http //www.ncepower.com NCEAP016N10LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =385A DS D uniquely optimized to provide the most efficient high frequency R =1.2m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate ... See More ⇒
8.12. Size:934K ncepower
nceap016n85ll.pdf
NCEAP016N85LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =385A DS D uniquely optimized to provide the most efficient high frequency R =1.2m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses Excel... See More ⇒
8.13. Size:793K ncepower
nceap023n10ll.pdf
NCEAP023N10LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =300A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product(FOM... See More ⇒
8.14. Size:967K ncepower
nceap020n60gu.pdf
http //www.ncepower.com NCEAP020N60GU NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP020N60GU uses Super Trench II technology that is V =60V,I =230A DS D uniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate ... See More ⇒
8.15. Size:822K ncepower
nceap018n60agu.pdf
NCEAP018N60AGU http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET General Features Description V =60V,I =270A (Silicon Limited) DS D The NCEAP018N60AGU uses Super Trench II technology that is R =1.4 m (typical) @ V =10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =4.5V DS(ON) GS switching perfor... See More ⇒
8.16. Size:395K ncepower
nceap026n10t.pdf
http //www.ncepower.com NCEAP026N10T NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP026N10T uses Super Trench II technology that is V =100V,I =245A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.15m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power ... See More ⇒
8.17. Size:436K ncepower
nceap025n60ag.pdf
http //www.ncepower.com NCEAP025N60AG NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP025N60AG uses Super Trench II technology that is V =60V,I =185A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.5m... See More ⇒
8.18. Size:583K ncepower
nceap01nd35ag.pdf
http //www.ncepower.com NCEAP01ND35AG NCE N-Channel Super Trench Power MOSFET Description General Features The NCEAP01ND35AG uses Super Trench technology that is V =100V,I =35A DS D uniquely optimized to provide the most efficient high frequency R =24m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =27m (typical) @ V =4.5V DS(ON) GS lo... See More ⇒
8.19. Size:493K ncepower
nceap028n85d.pdf
NCEAP028N85D http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP028N85D uses Super Trench II technology that is V =85V,I =220A DS D uniquely optimized to provide the most efficient high frequency R =2.4m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate cha... See More ⇒
Detailed specifications: NCE70N380T, NCE8205B, NCE8205T, NCE8601B, NCE8651Q, NCEA2309, NCEA75H25, NCEAP020N60GU, 50N06, NCEAP4075GU, NCEAP60P90AK, NCEP008NH40ASL, NCEP008NH40SL, NCEP013NH40GU, NCEP014NH60GU, NCEP015N85LL, NCEP015NH30AGU
Keywords - NCEAP055N12D MOSFET specs
NCEAP055N12D cross reference
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NCEAP055N12D replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
