NCEAP60P90AK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEAP60P90AK
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 90 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 643 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de NCEAP60P90AK MOSFET
NCEAP60P90AK datasheet
nceap60p90ak.pdf
NCEAP60P90AK http //www.ncepower.com NCE Automotive P-Channel Super Trench Power MOSFET General Features Description V =-60V,I =-90A DS D The NCEAP60P90AK uses Super Trench technology that is R =7.6m (typical) @ V =-10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =9.2m (typical) @ V =-4.5V DS(ON) GS switching performance. Both conduction and ... See More ⇒
nceap60t15g.pdf
http //www.ncepower.com NCEAP60T15G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R ... See More ⇒
nceap6055agu.pdf
http //www.ncepower.com NCEAP6055AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6055AGU uses Super Trench technology that is V =60V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.7m (typical) @ V =4.5V DS... See More ⇒
nceap60t20d.pdf
http //www.ncepower.com NCEAP60T20D NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T20D uses Super Trench technology that is uniquely V =60V,I =250A DS D optimized to provide the most efficient high frequency switching R =1.8m (typical) @ V =10V DS(ON) GS performance. Both conduction and switching power losses are Excellent gate c... See More ⇒
Otros transistores... NCE8205T , NCE8601B , NCE8651Q , NCEA2309 , NCEA75H25 , NCEAP020N60GU , NCEAP055N12D , NCEAP4075GU , IRFZ44 , NCEP008NH40ASL , NCEP008NH40SL , NCEP013NH40GU , NCEP014NH60GU , NCEP015N85LL , NCEP015NH30AGU , NCEP015NH30AQU , NCEP015NH30GU .
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