NCEAP60P90AK Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEAP60P90AK  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 643 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO-252

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NCEAP60P90AK datasheet

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NCEAP60P90AK

NCEAP60P90AK http //www.ncepower.com NCE Automotive P-Channel Super Trench Power MOSFET General Features Description V =-60V,I =-90A DS D The NCEAP60P90AK uses Super Trench technology that is R =7.6m (typical) @ V =-10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =9.2m (typical) @ V =-4.5V DS(ON) GS switching performance. Both conduction and

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NCEAP60P90AK

http //www.ncepower.com NCEAP60T15G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R

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NCEAP60P90AK

http //www.ncepower.com NCEAP6055AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6055AGU uses Super Trench technology that is V =60V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.7m (typical) @ V =4.5V DS

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NCEAP60P90AK

http //www.ncepower.com NCEAP60T20D NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T20D uses Super Trench technology that is uniquely V =60V,I =250A DS D optimized to provide the most efficient high frequency switching R =1.8m (typical) @ V =10V DS(ON) GS performance. Both conduction and switching power losses are Excellent gate c

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