NCEAP60P90AK Todos los transistores

 

NCEAP60P90AK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEAP60P90AK
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 643 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO-252

 Búsqueda de reemplazo de MOSFET NCEAP60P90AK

 

NCEAP60P90AK Datasheet (PDF)

 ..1. Size:623K  ncepower
nceap60p90ak.pdf

NCEAP60P90AK
NCEAP60P90AK

NCEAP60P90AKhttp://www.ncepower.comNCE Automotive P-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =-60V,I =-90ADS DThe NCEAP60P90AK uses Super Trench technology that isR =7.6m (typical) @ V =-10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =9.2m (typical) @ V =-4.5VDS(ON) GSswitching performance. Both conduction and

 7.1. Size:713K  ncepower
nceap60t15g.pdf

NCEAP60P90AK
NCEAP60P90AK

http://www.ncepower.com NCEAP60T15GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R

 7.2. Size:759K  ncepower
nceap6055agu.pdf

NCEAP60P90AK
NCEAP60P90AK

http://www.ncepower.comNCEAP6055AGUNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP6055AGU uses Super Trench technology that is V =60V,I =70ADS Duniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =7.7m (typical) @ V =4.5VDS

 7.3. Size:723K  ncepower
nceap60t20d.pdf

NCEAP60P90AK
NCEAP60P90AK

http://www.ncepower.com NCEAP60T20DNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP60T20D uses Super Trench technology that is uniquely V =60V,I =250ADS Doptimized to provide the most efficient high frequency switchingR =1.8m (typical) @ V =10VDS(ON) GSperformance. Both conduction and switching power losses are Excellent gate c

 7.4. Size:389K  ncepower
nceap60nd30ag.pdf

NCEAP60P90AK
NCEAP60P90AK

http://www.ncepower.comNCEAP60ND30AGNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP60ND30AG uses Super Trench technology that is V =60V,I =40ADS Duniquely optimized to provide the most efficient high frequency R =12m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =15m (typical) @ V =4.5VDS

 7.5. Size:754K  ncepower
nceap60t12ak.pdf

NCEAP60P90AK
NCEAP60P90AK

NCEAP60T12AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP60T12AK uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =150ADS Dswitching performance. Both conduction and switching power R

 7.6. Size:698K  ncepower
nceap6050aqu.pdf

NCEAP60P90AK
NCEAP60P90AK

http://www.ncepower.comNCEAP6050AQUNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP6050AQU uses Super Trench technology that is V =60V,I =68ADS Duniquely optimized to provide the most efficient high frequencyR =6.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power lossesR =7.7m (typical) @

 7.7. Size:740K  ncepower
nceap6035ag.pdf

NCEAP60P90AK
NCEAP60P90AK

http://www.ncepower.com NCEAP6035AGNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP6035AG uses Super Trench technology that is V =60V,I =48ADS Duniquely optimized to provide the most efficient high frequency R =9.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =12.5m (typical) @ V =4.5VDS(O

 7.8. Size:644K  ncepower
nceap60nd60g.pdf

NCEAP60P90AK
NCEAP60P90AK

NCEAP60ND60Ghttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP60ND60G uses Super Trench technology that is V =60V,I =70ADS Duniquely optimized to provide the most efficient high frequencyR =7.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R

 7.9. Size:675K  ncepower
nceap60t12ad.pdf

NCEAP60P90AK
NCEAP60P90AK

NCEAP60T12ADhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP60T12AD uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =150ADS Dswitching performance. Both conduction and switching power R

 7.10. Size:395K  ncepower
nceap6090agu.pdf

NCEAP60P90AK
NCEAP60P90AK

NCEAP6090AGUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP6090AGU uses Super Trench technology that is V =60V,I =130ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses R =3.5m (typical) @ V =

Otros transistores... NCE8205T , NCE8601B , NCE8651Q , NCEA2309 , NCEA75H25 , NCEAP020N60GU , NCEAP055N12D , NCEAP4075GU , IRF540N , NCEP008NH40ASL , NCEP008NH40SL , NCEP013NH40GU , NCEP014NH60GU , NCEP015N85LL , NCEP015NH30AGU , NCEP015NH30AQU , NCEP015NH30GU .

 

 
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