NCEAP60P90AK - описание и поиск аналогов

NCEAP60P90AK http //www.ncepower.com NCE Automotive P-Channel Super Trench Power MOSFET General Features Description V =-60V,I =-90A DS D The NCEAP60P90AK uses Super Trench technology that is R =7.6m (typical) @ V =-10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =9.2m (typical) @ V =-4.5V DS(ON) GS switching performance. Both conduction and

http //www.ncepower.com NCEAP60T15G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R

http //www.ncepower.com NCEAP6055AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6055AGU uses Super Trench technology that is V =60V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.7m (typical) @ V =4.5V DS

http //www.ncepower.com NCEAP60T20D NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T20D uses Super Trench technology that is uniquely V =60V,I =250A DS D optimized to provide the most efficient high frequency switching R =1.8m (typical) @ V =10V DS(ON) GS performance. Both conduction and switching power losses are Excellent gate c

http //www.ncepower.com NCEAP60ND30AG NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60ND30AG uses Super Trench technology that is V =60V,I =40A DS D uniquely optimized to provide the most efficient high frequency R =12m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =15m (typical) @ V =4.5V DS

NCEAP60T12AK http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP60T12AK uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =150A DS D switching performance. Both conduction and switching power R

http //www.ncepower.com NCEAP6050AQU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6050AQU uses Super Trench technology that is V =60V,I =68A DS D uniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses R =7.7m (typical) @

http //www.ncepower.com NCEAP6035AG NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6035AG uses Super Trench technology that is V =60V,I =48A DS D uniquely optimized to provide the most efficient high frequency R =9.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =12.5m (typical) @ V =4.5V DS(O

NCEAP60ND60G http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60ND60G uses Super Trench technology that is V =60V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R

NCEAP60T12AD http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP60T12AD uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =150A DS D switching performance. Both conduction and switching power R

NCEAP6090AGU http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6090AGU uses Super Trench technology that is V =60V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses R =3.5m (typical) @ V =