NCEP008NH40SL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP008NH40SL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 270 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 420 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 1950 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00135 Ohm
Paquete / Cubierta: STOLL
Búsqueda de reemplazo de NCEP008NH40SL MOSFET
NCEP008NH40SL datasheet
ncep008nh40sl.pdf
http //www.ncepower.com NCEP008NH40SL NCE Automotive N-Channel Super Trench III Power MOSFET Description General Features The NCEP008NH40SL uses Super Trench III technology V =40V,I =420A DS D that is uniquely optimized to provide the most efficient high R =0.6m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =0.95m (typical) @ V =4.5V DS
ncep008nh40agu.pdf
http //www.ncepower.com NCEP008NH40AGU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP008NH40AGU uses Super Trench III technology V =40V,I =353A DS D that is uniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and switching power losses are minimized due to an
ncep008nh40asl.pdf
NCEP008NH40ASL http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP008NH40ASL uses Super Trench III technology V =40V,I =397A DS D that is uniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and switching power losses are minimized due to
ncep008nh40gu.pdf
http //www.ncepower.com NCEP008NH40GU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP008NH40GU uses Super Trench III technology V =40V,I =375A DS D that is uniquely optimized to provide the most efficient high R =0.6m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =0.95m (typical) @ V =4.5V DS(ON) GS switch
Otros transistores... NCE8651Q , NCEA2309 , NCEA75H25 , NCEAP020N60GU , NCEAP055N12D , NCEAP4075GU , NCEAP60P90AK , NCEP008NH40ASL , IRF1404 , NCEP013NH40GU , NCEP014NH60GU , NCEP015N85LL , NCEP015NH30AGU , NCEP015NH30AQU , NCEP015NH30GU , NCEP018NH30QU , NCEP023NH85AGU .
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