NCEP008NH40SL
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEP008NH40SL
Marking Code: P008NH40SL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 270
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 420
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 140
nC
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 1950
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00135
Ohm
Package: STOLL
NCEP008NH40SL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEP008NH40SL
Datasheet (PDF)
..1. Size:650K ncepower
ncep008nh40sl.pdf
http://www.ncepower.comNCEP008NH40SLNCE Automotive N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP008NH40SL uses Super Trench III technology V =40V,I =420ADS Dthat is uniquely optimized to provide the most efficient highR =0.6m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =0.95m (typical) @ V =4.5VDS
3.1. Size:644K ncepower
ncep008nh40agu.pdf
http://www.ncepower.com NCEP008NH40AGUNCE N-Channel Super Trench III Power MOSFETDescription General FeaturesThe NCEP008NH40AGU uses Super Trench III technologyV =40V,I =353ADS Dthat is uniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andswitching power losses are minimized due to an
3.2. Size:685K ncepower
ncep008nh40asl.pdf
NCEP008NH40ASLhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP008NH40ASL uses Super Trench III technologyV =40V,I =397ADS Dthat is uniquely optimized to provide the most efficient highR =0.72m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andswitching power losses are minimized due to
3.3. Size:662K ncepower
ncep008nh40gu.pdf
http://www.ncepower.comNCEP008NH40GUNCE N-Channel Super Trench III Power MOSFETDescription General FeaturesThe NCEP008NH40GU uses Super Trench III technologyV =40V,I =375ADS Dthat is uniquely optimized to provide the most efficient high R =0.6m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =0.95m (typical) @ V =4.5VDS(ON) GSswitch
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