NCEP023NH85AGU Todos los transistores

NCEP023NH85AGU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET (Primary) Description General Features The NCEP023NH85AGU uses Super Trench III technology V =85V,I =250A DS D that is uniquely optimized to provide the most efficient high R =1.9m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =2.6m (typical) @ V =4.5V DS(ON)

NCEP023NH85GU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP023NH85GU uses Super Trench III technology that V =85V,I =245A DS D is uniquely optimized to provide the most efficient high R =2.1m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) D

http //www.ncepower.com NCEP023NH30GU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP023NH30GU uses Super Trench III technology V =30V,I =114A DS D that is uniquely optimized to provide the most efficient high R =2.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =3.3m (typical) @ V =4.5V DS(ON) GS switchi

NCEP023N10, NCEP023N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =240A DS D switching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext

NCEP023N10T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =280A DS D switching performance. Both conduction and switching power R =1.85m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely low combinati

NCEP023N10, NCEP023N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =240A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

NCEP023N85M, NCEP023N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =260A DS D switching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ex

NCEP023N85, NCEP023N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =260A DS D switching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr

NCEP023N85, NCEP023N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =260A DS D switching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr

NCEP023N85, NCEP023N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =260A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

NCEP023N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.7m , typical@ VGS=10V losses are minimized due to an extremely low combinat

NCEP023N85T NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =290A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.8m , typical@ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) product(FOM) lo

NCEP023N10, NCEP023N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =240A DS D switching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext