NCEP023NH85AGU
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEP023NH85AGU
Marking Code: P023NH85AGU
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 242
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 250
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 88.9
nC
trⓘ - Rise Time: 66
nS
Cossⓘ -
Output Capacitance: 2020
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032
Ohm
Package:
PDFN5X6-8L
NCEP023NH85AGU
Datasheet (PDF)
..1. Size:797K ncepower
ncep023nh85agu.pdf 
NCEP023NH85AGUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFET (Primary)Description General FeaturesThe NCEP023NH85AGU uses Super Trench III technology V =85V,I =250ADS Dthat is uniquely optimized to provide the most efficient high R =1.9m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =2.6m (typical) @ V =4.5VDS(ON)
3.1. Size:687K ncepower
ncep023nh85gu.pdf
NCEP023NH85GUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP023NH85GU uses Super Trench III technology that V =85V,I =245ADS Dis uniquely optimized to provide the most efficient highR =2.1m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and Excellent gate charge x R product(FOM)D
5.1. Size:713K ncepower
ncep023nh30gu.pdf
http://www.ncepower.comNCEP023NH30GUNCE N-Channel Super Trench III Power MOSFETDescription General FeaturesThe NCEP023NH30GU uses Super Trench III technologyV =30V,I =114ADS Dthat is uniquely optimized to provide the most efficient high R =2.0m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =3.3m (typical) @ V =4.5VDS(ON) GSswitchi
6.1. Size:855K ncepower
ncep023n10d.pdf
NCEP023N10, NCEP023N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =240ADS Dswitching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext
6.2. Size:2030K ncepower
ncep023n10t.pdf
NCEP023N10TNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =280ADS Dswitching performance. Both conduction and switching power R =1.85m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati
6.3. Size:635K ncepower
ncep023n10 ncep023n10d.pdf
NCEP023N10, NCEP023N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =240A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
6.4. Size:939K ncepower
ncep023n85m.pdf
NCEP023N85M, NCEP023N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ex
6.5. Size:940K ncepower
ncep023n85.pdf
NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr
6.6. Size:940K ncepower
ncep023n85d.pdf
NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr
6.7. Size:412K ncepower
ncep023n85 ncep023n85d.pdf
NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =260A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
6.8. Size:409K ncepower
ncep023n10ll.pdf
NCEP023N10LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.7m , typical@ VGS=10V losses are minimized due to an extremely low combinat
6.9. Size:400K ncepower
ncep023n85t.pdf
NCEP023N85TNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =290A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.8m , typical@ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) product(FOM) lo
6.10. Size:855K ncepower
ncep023n10.pdf
NCEP023N10, NCEP023N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =240ADS Dswitching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext
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