NCES120P075T4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCES120P075T4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 146 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 21 V
|Id|ⓘ - Corriente continua de drenaje: 36 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 58 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
Paquete / Cubierta: TO-247-4L
Búsqueda de reemplazo de MOSFET NCES120P075T4
NCES120P075T4 Datasheet (PDF)
nces120p075t4.pdf
PbFree ProductNCES120P075T41200V, 36A, N-channel SiC power MOSFETGeneral Description:NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high
nces120p035t4.pdf
PbFree ProductNCES120P035T41200V, 66A, N-channel SiC power MOSFETGeneral Description:NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high
nces120r036t4.pdf
PbFree ProductNCES120R036T41200V, 50A, N-channel SiC power MOSFETGeneral Description:NCES120R036T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high
nces120r062t4.pdf
PbFree ProductNCES120R062T41200V, 26A, N-channel SiC power MOSFETGeneral Description:NCES120R062T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high
nces120r018t4.pdf
PbFree ProductNCES120R018T41200V, 81A, N-channel SiC power MOSFETGeneral Description:NCES120R018T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high
Otros transistores... NCEP1580F , NCEP40ND80G , NCEP40T14A , NCEP60ND30AG , NCEP60ND60G , NCES075R026T , NCES075R026T4 , NCES120P035T4 , K3569 , NCES120R018T4 , BL10N40-A , BL10N40-D , BL10N40-P , BL10N40-U , BL10N60-A , BL10N60A-A , BL10N60A-P .
