NCES120P075T4
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCES120P075T4
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 146
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 21
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 36
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 60
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 58
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085
Ohm
Package:
TO-247-4L
NCES120P075T4
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCES120P075T4
Datasheet (PDF)
..1. Size:821K ncepower
nces120p075t4.pdf 
PbFree ProductNCES120P075T41200V, 36A, N-channel SiC power MOSFETGeneral Description:NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high
5.1. Size:800K ncepower
nces120p035t4.pdf
PbFree ProductNCES120P035T41200V, 66A, N-channel SiC power MOSFETGeneral Description:NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high
7.1. Size:854K ncepower
nces120r036t4.pdf
PbFree ProductNCES120R036T41200V, 50A, N-channel SiC power MOSFETGeneral Description:NCES120R036T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high
7.2. Size:832K ncepower
nces120r062t4.pdf
PbFree ProductNCES120R062T41200V, 26A, N-channel SiC power MOSFETGeneral Description:NCES120R062T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high
7.3. Size:871K ncepower
nces120r018t4.pdf
PbFree ProductNCES120R018T41200V, 81A, N-channel SiC power MOSFETGeneral Description:NCES120R018T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high
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