NCES120P075T4 MOSFET. Datasheet pdf. Equivalent
Type Designator: NCES120P075T4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 146 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 21 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 36 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 60 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 58 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO-247-4L
NCES120P075T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCES120P075T4 Datasheet (PDF)
nces120p075t4.pdf
PbFree ProductNCES120P075T41200V, 36A, N-channel SiC power MOSFETGeneral Description:NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high
nces120p035t4.pdf
PbFree ProductNCES120P035T41200V, 66A, N-channel SiC power MOSFETGeneral Description:NCES120P035T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high
nces120r036t4.pdf
PbFree ProductNCES120R036T41200V, 50A, N-channel SiC power MOSFETGeneral Description:NCES120R036T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high
nces120r062t4.pdf
PbFree ProductNCES120R062T41200V, 26A, N-channel SiC power MOSFETGeneral Description:NCES120R062T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high
nces120r018t4.pdf
PbFree ProductNCES120R018T41200V, 81A, N-channel SiC power MOSFETGeneral Description:NCES120R018T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high
Datasheet: NCEP1580F , NCEP40ND80G , NCEP40T14A , NCEP60ND30AG , NCEP60ND60G , NCES075R026T , NCES075R026T4 , NCES120P035T4 , K3569 , NCES120R018T4 , BL10N40-A , BL10N40-D , BL10N40-P , BL10N40-U , BL10N60-A , BL10N60A-A , BL10N60A-P .
