BL12N70-P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BL12N70-P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 230 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm

Encapsulados: TO-220

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BL12N70-P datasheet

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 bl12n70-p bl12n70-a.pdf pdf_icon

BL12N70-P

BL12N70 Power MOSFET 1 Description Step-Down Converter BL12N70, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par

 9.1. Size:175K  international rectifier
 irfbl12n50a.pdf pdf_icon

BL12N70-P

PD - 91818A SMPS MOSFET IRFBL12N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.45 13A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Super-D2PakTM Avalanche V

 9.2. Size:539K  belling
 bl12n65-p bl12n65-a.pdf pdf_icon

BL12N70-P

BL12N65 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL12N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application

 9.3. Size:538K  belling
 bl12n60-p bl12n60-a.pdf pdf_icon

BL12N70-P

BL12N60 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL12N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application

MOSTRAR MÁS

Otros transistores... BL12N60A-A, BL12N60A-P, BL12N60-P, BL12N65-A, BL12N65A-A, BL12N65A-P, BL12N65-P, BL12N70-A, BS170, BL13N25-A, BL13N25-D, BL13N25L-A, BL13N25L-D, BL13N25L-P, BL13N25L-U, BL13N25-P, BL13N25-U