BL12N70-P Specs and Replacement

Type Designator: BL12N70-P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO-220

BL12N70-P substitution

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BL12N70-P datasheet

 ..1. Size:1038K  belling
 bl12n70-p bl12n70-a.pdf pdf_icon

BL12N70-P

BL12N70 Power MOSFET 1 Description Step-Down Converter BL12N70, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par... See More ⇒

 9.1. Size:175K  international rectifier
 irfbl12n50a.pdf pdf_icon

BL12N70-P

PD - 91818A SMPS MOSFET IRFBL12N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.45 13A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Super-D2PakTM Avalanche V... See More ⇒

 9.2. Size:539K  belling
 bl12n65-p bl12n65-a.pdf pdf_icon

BL12N70-P

BL12N65 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL12N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application... See More ⇒

 9.3. Size:538K  belling
 bl12n60-p bl12n60-a.pdf pdf_icon

BL12N70-P

BL12N60 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL12N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application... See More ⇒

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Detailed specifications: BL12N60A-A, BL12N60A-P, BL12N60-P, BL12N65-A, BL12N65A-A, BL12N65A-P, BL12N65-P, BL12N70-A, BS170, BL13N25-A, BL13N25-D, BL13N25L-A, BL13N25L-D, BL13N25L-P, BL13N25L-U, BL13N25-P, BL13N25-U

Keywords - BL12N70-P MOSFET specs

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