FQI13N50C Todos los transistores

 ..1. Size:967K  fairchild semi
 fqb13n50ctm fqb13n50c fqi13n50c fqi13n50ctu.pdf

October 2008 QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 43nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially

 ..2. Size:583K  onsemi
 fqi13n50c.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:673K  fairchild semi
 fqb13n06tm fqi13n06tu.pdf

May 2001 TM QFET FQB13N06 / FQI13N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 60V, RDS(on) = 0.135 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology has been especially

 8.2. Size:668K  fairchild semi
 fqb13n06ltm fqi13n06ltu.pdf

May 2001 TM QFET FQB13N06L / FQI13N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13.6A, 60V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been es