Справочник MOSFET. FQI13N50C

 

FQI13N50C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQI13N50C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 195 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 43 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.48 Ohm
   Тип корпуса: TO262 I2PAK

 Аналог (замена) для FQI13N50C

 

 

FQI13N50C Datasheet (PDF)

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FQI13N50C FQI13N50C

October 2008QFETFQB13N50C/FQI13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially

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FQI13N50C FQI13N50C

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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FQI13N50C FQI13N50C

May 2001TMQFETFQB13N06 / FQI13N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 60V, RDS(on) = 0.135 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.8 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology has been especially

 8.2. Size:668K  fairchild semi
 fqb13n06ltm fqi13n06ltu.pdf

FQI13N50C FQI13N50C

May 2001TMQFETFQB13N06L / FQI13N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 60V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been es

Другие MOSFET... FQD7P20 , FQD8P10 , FQD8P10TMF085 , FQD9N25 , FQD9N25TMF085 , FQH44N10 , FDS4480 , FQH8N100C , IRF540 , FQI27N25 , FQI27N25TUF085 , FQI4N80 , IRFW630B , FQI4N90 , FQI50N06 , FQI5N60C , IRF644B .

 

 
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