BL25N40-W Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BL25N40-W  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 260 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 330 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: TO-3PN

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BL25N40-W datasheet

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BL25N40-W

BL25N40 Power MOSFET 1 Description Step-Down Converter BL25N40, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

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BL25N40-W

BL25N50 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL25N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati

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BL25N40-W

BL25N60 Power MOSFET 1 Description BL25N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 600

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BL25N40-W

BL25N65 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL25N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applica

MOSTRAR MÁS

Otros transistores... BL20N65-W, BL23N50-A, BL23N50-K, BL23N50-P, BL23N50-W, BL25N40-A, BL25N40-F, BL25N40-P, IRF3205, BL25N50-F, BL25N50-W, BL25N60-F, BL25N60-W, BL25N65-F, BL25N65-W, BL2N50-A, BL2N50-D