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BL25N40-W Spec and Replacement


   Type Designator: BL25N40-W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 56 nC
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-3PN

 BL25N40-W Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BL25N40-W Specs

 ..1. Size:1108K  belling
 bl25n40-p bl25n40-a bl25n40-w bl25n40-f.pdf pdf_icon

BL25N40-W

BL25N40 Power MOSFET 1 Description Step-Down Converter BL25N40, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

 9.1. Size:552K  belling
 bl25n50-w bl25n50-f.pdf pdf_icon

BL25N40-W

BL25N50 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL25N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati... See More ⇒

 9.2. Size:1376K  belling
 bl25n60-w bl25n60-f.pdf pdf_icon

BL25N40-W

BL25N60 Power MOSFET 1 Description BL25N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 600 ... See More ⇒

 9.3. Size:503K  belling
 bl25n65-w bl25n65-f.pdf pdf_icon

BL25N40-W

BL25N65 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL25N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applica... See More ⇒

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Detailed specifications: BL20N65-W , BL23N50-A , BL23N50-K , BL23N50-P , BL23N50-W , BL25N40-A , BL25N40-F , BL25N40-P , IRF3205 , BL25N50-F , BL25N50-W , BL25N60-F , BL25N60-W , BL25N65-F , BL25N65-W , BL2N50-A , BL2N50-D .

Keywords - BL25N40-W MOSFET specs

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