BL30N65-W Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BL30N65-W  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 350 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 600 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: TO-3PN

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BL30N65-W datasheet

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BL30N65-W

BL30N65 Power MOSFET 1 Description Step-Down Converter BL30N65, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

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 bl30n60-w bl30n60-f.pdf pdf_icon

BL30N65-W

BL30N60 Power MOSFET 1 Description Step-Down Converter BL30N60, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par

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 bl30n50-w bl30n50-f.pdf pdf_icon

BL30N65-W

BL30N50 Power MOSFET 1 Description BL30N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 500

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 bl30n30-p bl30n30-a bl30n30-b.pdf pdf_icon

BL30N65-W

BL30N30 Power MOSFET 1 Description Step-Down Converter BL30N30, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

MOSTRAR MÁS

Otros transistores... BL30N30-A, BL30N30-B, BL30N30-P, BL30N50-F, BL30N50-W, BL30N60-F, BL30N60-W, BL30N65-F, 8205A, BL33N25-A, BL33N25-P, BL3N100-A, BL3N100-D, BL3N100E-A, BL3N100E-D, BL3N100E-P, BL3N100E-U