BL30N65-W - аналоги и даташиты транзистора

 

BL30N65-W - Даташиты. Аналоги. Основные параметры


   Наименование производителя: BL30N65-W
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 350 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 156 nC
   tr ⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 600 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: TO-3PN

 Аналог (замена) для BL30N65-W

 

BL30N65-W Datasheet (PDF)

 ..1. Size:1408K  belling
 bl30n65-f bl30n65-w.pdf pdf_icon

BL30N65-W

BL30N65 Power MOSFET 1 Description Step-Down Converter BL30N65, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 8.1. Size:1425K  belling
 bl30n60-w bl30n60-f.pdf pdf_icon

BL30N65-W

BL30N60 Power MOSFET 1 Description Step-Down Converter BL30N60, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par

 9.1. Size:1368K  belling
 bl30n50-w bl30n50-f.pdf pdf_icon

BL30N65-W

BL30N50 Power MOSFET 1 Description BL30N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 500

 9.2. Size:1115K  belling
 bl30n30-p bl30n30-a bl30n30-b.pdf pdf_icon

BL30N65-W

BL30N30 Power MOSFET 1 Description Step-Down Converter BL30N30, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... BL30N30-A , BL30N30-B , BL30N30-P , BL30N50-F , BL30N50-W , BL30N60-F , BL30N60-W , BL30N65-F , 8205A , BL33N25-A , BL33N25-P , BL3N100-A , BL3N100-D , BL3N100E-A , BL3N100E-D , BL3N100E-P , BL3N100E-U .

 

 
Back to Top

 


 
.