FQI5N60C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQI5N60C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
Paquete / Cubierta: TO262 I2PAK

Búsqueda de reemplazo de MOSFET FQI5N60C

FQI5N60C Datasheet (PDF)

..1. Size:655K fairchild semi
fqb5n60ctm fqb5n60c fqi5n60c fqi5n60ctu.pdf

TMQFETFQB5N60C / FQI5N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especially tailored

7.1. Size:553K fairchild semi
fqb5n60 fqi5n60.pdf

April 2000TMQFETQFETQFETQFETFQB5N60 / FQI5N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 9.0 pF)This advanced technology h

9.1. Size:945K fairchild semi
fqb5n50ctm fqb5n50c fqi5n50c fqi5n50ctu.pdf

October 2008QFETFQB5N50C/FQI5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tai

9.2. Size:539K fairchild semi
fqb5n20l fqi5n20l.pdf

December 2000TMQFETQFETQFETQFETFQB5N20L / FQI5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced

9.3. Size:700K fairchild semi
fqb5n20tm fqi5n20tu.pdf

April 2000TMQFETQFETQFETQFETFQB5N20 / FQI5N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

9.4. Size:765K fairchild semi
fqb5n30tm fqi5n30tu.pdf

May 2000TMQFETQFETQFETQFETFQB5N30 / FQI5N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.4A, 300V, RDS(on) = 0.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.8 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology h

9.5. Size:760K fairchild semi
fqb5n15tm fqi5n15tu.pdf

May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.4A, 150V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.4 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology h

9.6. Size:1072K fairchild semi
fqb5n90 fqi5n90.pdf

October 2008QFETFQB5N90 / FQI5N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.4A, 900V, RDS(on) = 2.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has been especiall

9.7. Size:711K fairchild semi
fqb5n40tm fqi5n40tu.pdf

April 2000TMQFETQFETQFETQFETFQB5N40 / FQI5N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology

9.8. Size:538K fairchild semi
fqb5n20ltm fqi5n20ltu.pdf

9.9. Size:670K fairchild semi
fqi5n80tu.pdf

September 2000TMQFETFQB5N80 / FQI5N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.8A, 800V, RDS(on) = 2.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especia

Otros transistores... FQH8N100C , FQI13N50C , FQI27N25 , FQI27N25TUF085 , FQI4N80 , IRFW630B , FQI4N90 , FQI50N06 , 10N60 , IRF644B , FQI7N60 , IRF634B , FQI7N80 , FDC6392S , FQI8N60C , FDP047AN08A0 , FQL40N50 .

Liste

Recientemente añadidas las descripciónes de los transistores: