FQI5N60C MOSFET. Datasheet pdf. Equivalent
Type Designator: FQI5N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO262 I2PAK
FQI5N60C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQI5N60C Datasheet (PDF)
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Datasheet: FQH8N100C , FQI13N50C , FQI27N25 , FQI27N25TUF085 , FQI4N80 , IRFW630B , FQI4N90 , FQI50N06 , 10N60 , IRF644B , FQI7N60 , IRF634B , FQI7N80 , FDC6392S , FQI8N60C , FDP047AN08A0 , FQL40N50 .
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