FQI5N60C MOSFET. Datasheet pdf. Equivalent
Type Designator: FQI5N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 4.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 15 nC
Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm
Package: TO262, I2PAK
FQI5N60C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQI5N60C Datasheet (PDF)
1.1. fqb5n60c fqi5n60c.pdf 
Size:655K _fairchild_semi
TM QFET FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to Fast sw
1.2. fqi5n60ctu.pdf Size:655K _fairchild_semi
TM QFET FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored
3.1. fqb5n60 fqi5n60.pdf Size:553K _fairchild_semi
April 2000 TM QFET QFET QFET QFET FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.0A, 600V, RDS(on) = 2.0? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology has been espec
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
