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FDP047AN08A0 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDP047AN08A0

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 310 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm

Encapsulados: TO220

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FDP047AN08A0 datasheet

 ..1. Size:614K  fairchild semi
fdp047an08a0.pdf pdf_icon

FDP047AN08A0

October 2013 FDP047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75 V, 80 A, 4.7 m Applications Features RDS(ON) = 4.0 m (Typ.), VGS = 10 V, ID = 80 A Synchronous Rectification for ATX / Server / Telecom PSU Qg(tot) = 92 nC (Typ.), VGS = 10V Battery Protection Circuit Low Miller Charge Motor Drives and Uninterruptible Power Supplies Low Qrr Body

 ..2. Size:606K  fairchild semi
fdp047an08a0 fdi047an08a0 fdh047an08a0.pdf pdf_icon

FDP047AN08A0

June 2004 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7m Features Applications rDS(ON) = 4.0m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Sys

 ..3. Size:744K  onsemi
fdp047an08a0 fdh047an08a0.pdf pdf_icon

FDP047AN08A0

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:526K  fairchild semi
fdp047n08.pdf pdf_icon

FDP047AN08A0

March 2008 FDP047N08 tm N-Channel PowerTrench MOSFET 75V, 164A, 4.7m Features Description RDS(on) = 3.8m ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain super

Otros transistores... FQI50N06 , FQI5N60C , IRF644B , FQI7N60 , IRF634B , FQI7N80 , FDC6392S , FQI8N60C , AON6414A , FQL40N50 , FQL40N50F , FQN1N50C , FQN1N60C , FDP3652 , FQNL2N50B , FQP10N20C , FDB3652 .

History: NTD4815N-1G | MSAER12N50A | BUK7Y4R4-40E | BUK963R1-40E | NTD4810NH-1G

 

 

 

 

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