FDP047AN08A0 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDP047AN08A0
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 310 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de FDP047AN08A0 MOSFET
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FDP047AN08A0 datasheet
fdp047an08a0.pdf
October 2013 FDP047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75 V, 80 A, 4.7 m Applications Features RDS(ON) = 4.0 m (Typ.), VGS = 10 V, ID = 80 A Synchronous Rectification for ATX / Server / Telecom PSU Qg(tot) = 92 nC (Typ.), VGS = 10V Battery Protection Circuit Low Miller Charge Motor Drives and Uninterruptible Power Supplies Low Qrr Body
fdp047an08a0 fdi047an08a0 fdh047an08a0.pdf
June 2004 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7m Features Applications rDS(ON) = 4.0m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Sys
fdp047an08a0 fdh047an08a0.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdp047n08.pdf
March 2008 FDP047N08 tm N-Channel PowerTrench MOSFET 75V, 164A, 4.7m Features Description RDS(on) = 3.8m ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain super
Otros transistores... FQI50N06 , FQI5N60C , IRF644B , FQI7N60 , IRF634B , FQI7N80 , FDC6392S , FQI8N60C , AON6414A , FQL40N50 , FQL40N50F , FQN1N50C , FQN1N60C , FDP3652 , FQNL2N50B , FQP10N20C , FDB3652 .
History: NTD4815N-1G | MSAER12N50A | BUK7Y4R4-40E | BUK963R1-40E | NTD4810NH-1G
History: NTD4815N-1G | MSAER12N50A | BUK7Y4R4-40E | BUK963R1-40E | NTD4810NH-1G
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
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