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FDP047AN08A0 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDP047AN08A0
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 310 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 92 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0047 Ohm
   Тип корпуса: TO220

 Аналог (замена) для FDP047AN08A0

 

 

FDP047AN08A0 Datasheet (PDF)

 ..1. Size:614K  fairchild semi
fdp047an08a0.pdf

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October 2013FDP047AN08A0 / FDH047AN08A0N-Channel PowerTrench MOSFET75 V, 80 A, 4.7 mApplicationsFeatures RDS(ON) = 4.0 m (Typ.), VGS = 10 V, ID = 80 A Synchronous Rectification for ATX / Server / Telecom PSU Qg(tot) = 92 nC (Typ.), VGS = 10V Battery Protection Circuit Low Miller Charge Motor Drives and Uninterruptible Power Supplies Low Qrr Body

 ..2. Size:606K  fairchild semi
fdp047an08a0 fdi047an08a0 fdh047an08a0.pdf

FDP047AN08A0 FDP047AN08A0

June 2004FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0N-Channel PowerTrench MOSFET75V, 80A, 4.7mFeatures Applications rDS(ON) = 4.0m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Sys

 ..3. Size:744K  onsemi
fdp047an08a0 fdh047an08a0.pdf

FDP047AN08A0 FDP047AN08A0

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:526K  fairchild semi
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March 2008FDP047N08tmN-Channel PowerTrench MOSFET 75V, 164A, 4.7mFeatures Description RDS(on) = 3.8m ( Typ.)@ VGS = 10V, ID = 80A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet Low gate chargemaintain super

 8.2. Size:536K  fairchild semi
fdp047n10.pdf

FDP047AN08A0 FDP047AN08A0

August 2008FDP047N10tmN-Channel PowerTrench MOSFET 100V, 164A, 4.7mDescription General Description RDS(on) = 3.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semicon-ductors advance PowerTrench process that has been especially Fast switching speedtailored to minimize the on-state resistance and yet maintain superior switch

 8.3. Size:698K  onsemi
fdp047n08.pdf

FDP047AN08A0 FDP047AN08A0

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.4. Size:908K  onsemi
fdp047n10.pdf

FDP047AN08A0 FDP047AN08A0

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.5. Size:284K  inchange semiconductor
fdp047n08.pdf

FDP047AN08A0 FDP047AN08A0

isc N-Channel MOSFET Transistor FDP047N08FEATURESWith TO-220 packagingDrain Source Voltage-: V 75VDSSStatic drain-source on-resistance:RDS(on) 4.7m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 8.6. Size:283K  inchange semiconductor
fdp047n10.pdf

FDP047AN08A0 FDP047AN08A0

isc N-Channel MOSFET Transistor FDP047N10FEATURESWith TO-220 packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 4.7m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

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