FQL40N50F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQL40N50F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 460 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
Paquete / Cubierta: TO264

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FQL40N50F Datasheet (PDF)

..1. Size:673K fairchild semi
fql40n50f.pdf

September 2001TMFRFETFQL40N50F500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 40A, 500V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 155 nC)planar stripe, DMOS technology. Low Crss ( typical 95 pF)This advanced technology has been especially ta

6.1. Size:623K fairchild semi
fql40n50.pdf

May 2001TMQFETFQL40N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 40A, 500V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 155 nC)planar stripe, DMOS technology. Low Crss ( typical 95 pF)This advanced technology has been especially tailored t

6.2. Size:200K inchange semiconductor
fql40n50.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FQL40N50FEATURESHigh breakdown voltageFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingPower factor correction,motor drive and welding machineABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

Otros transistores... IRF644B , FQI7N60 , IRF634B , FQI7N80 , FDC6392S , FQI8N60C , FDP047AN08A0 , FQL40N50 , 7N65 , FQN1N50C , FQN1N60C , FDP3652 , FQNL2N50B , FQP10N20C , FDB3652 , FQP11N40C , FDP3632 .

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