FQL40N50F Datasheet and Replacement. Cross Reference Search

FQL40N50F Datasheet (PDF)

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September 2001TMFRFETFQL40N50F500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 40A, 500V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 155 nC)planar stripe, DMOS technology. Low Crss ( typical 95 pF)This advanced technology has been especially ta

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May 2001TMQFETFQL40N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 40A, 500V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 155 nC)planar stripe, DMOS technology. Low Crss ( typical 95 pF)This advanced technology has been especially tailored t

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INCHANGE Semiconductorisc N-Channel MOSFET Transistor FQL40N50FEATURESHigh breakdown voltageFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingPower factor correction,motor drive and welding machineABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

Datasheet: IRF644B , FQI7N60 , IRF634B , FQI7N80 , FDC6392S , FQI8N60C , FDP047AN08A0 , FQL40N50 , IRF9540 , FQN1N50C , FQN1N60C , FDP3652 , FQNL2N50B , FQP10N20C , FDB3652 , FQP11N40C , FDP3632 .