FQL40N50F Datasheet and Replacement
Type Designator: FQL40N50F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 460 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 155 nC
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO264
FQL40N50F substitution
FQL40N50F Datasheet (PDF)
fql40n50f.pdf
September 2001TMFRFETFQL40N50F500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 40A, 500V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 155 nC)planar stripe, DMOS technology. Low Crss ( typical 95 pF)This advanced technology has been especially ta
fql40n50.pdf
May 2001TMQFETFQL40N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 40A, 500V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 155 nC)planar stripe, DMOS technology. Low Crss ( typical 95 pF)This advanced technology has been especially tailored t
fql40n50.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FQL40N50FEATURESHigh breakdown voltageFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingPower factor correction,motor drive and welding machineABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
Datasheet: IRF644B , FQI7N60 , IRF634B , FQI7N80 , FDC6392S , FQI8N60C , FDP047AN08A0 , FQL40N50 , 7N65 , FQN1N50C , FQN1N60C , FDP3652 , FQNL2N50B , FQP10N20C , FDB3652 , FQP11N40C , FDP3632 .
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