All MOSFET. FQL40N50F Datasheet

 

FQL40N50F Datasheet and Replacement


   Type Designator: FQL40N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 460 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO264
 

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FQL40N50F Datasheet (PDF)

 ..1. Size:673K  fairchild semi
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FQL40N50F

September 2001TMFRFETFQL40N50F500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 40A, 500V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 155 nC)planar stripe, DMOS technology. Low Crss ( typical 95 pF)This advanced technology has been especially ta

 6.1. Size:623K  fairchild semi
 fql40n50.pdf pdf_icon

FQL40N50F

May 2001TMQFETFQL40N50500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 40A, 500V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 155 nC)planar stripe, DMOS technology. Low Crss ( typical 95 pF)This advanced technology has been especially tailored t

 6.2. Size:200K  inchange semiconductor
 fql40n50.pdf pdf_icon

FQL40N50F

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FQL40N50FEATURESHigh breakdown voltageFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingPower factor correction,motor drive and welding machineABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

Datasheet: IRF644B , FQI7N60 , IRF634B , FQI7N80 , FDC6392S , FQI8N60C , FDP047AN08A0 , FQL40N50 , IRF9540 , FQN1N50C , FQN1N60C , FDP3652 , FQNL2N50B , FQP10N20C , FDB3652 , FQP11N40C , FDP3632 .

Keywords - FQL40N50F MOSFET datasheet

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