FQP10N20C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQP10N20C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 72 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 20 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
   Paquete / Cubierta: TO220

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FQP10N20C Datasheet (PDF)

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fqp10n20c fqpf10n20c.pdf

TMQFETFQP10N20C/FQPF10N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 40.5 pF)This advanced technology has been especially tailor

..2. Size:821K onsemi
fqp10n20c fqpf10n20c.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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fqp10n20c.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FQP10N20CFEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMU

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fqp10n20ctstu.pdf

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fqp10n20.pdf

April 2000TMQFETQFETQFETQFET 200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 10A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has been

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fqp10n60cf fqpf10n60cf.pdf

February 2007TMFRFETFQP10N60CF / FQPF10N60CF600V N-Channel MOSFETFeatures Description 9A, 600V, RDS(on) = 0.8 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 44 nC)DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especia

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fqp10n50cf fqpf10n50cf.pdf

December 2006 TM FRFETFQP10N50CF / FQPF10N50CF 500V N-Channel MOSFETFeatures Description 10A, 500V, RDS(on) = 0.61 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 43 nC)DMOS technology. Low Crss (typical 16pF)This advanced technology has been espe

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fqp10n60.pdf

TIGER ELECTRONIC CO.,LTDProduct specification600V N-Channel MOSFETFQP10N60DESCRIPTIONThese N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t

8.4. Size:1122K fairchild semi
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April 2007 QFETFQP10N60C / FQPF10N60C600V N-Channel MOSFETFeatures Description 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 44 nC)DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especiall

8.5. Size:1465K onsemi
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Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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