All MOSFET. FQP10N20C Datasheet

 

FQP10N20C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP10N20C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 72 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.36 Ohm

Package: TO220

FQP10N20C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP10N20C Datasheet (PDF)

1.1. fqp10n20c fqpf10n20c.pdf Size:875K _fairchild_semi

FQP10N20C
FQP10N20C

TM QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.5A, 200V, RDS(on) = 0.36? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 40.5 pF) This advanced technology has been especially tailored to • Fast

2.1. fqp10n20.pdf Size:774K _fairchild_semi

FQP10N20C
FQP10N20C

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 10A, 200V, RDS(on) = 0.36? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technology has been especially t

 4.1. fqp10n50cf fqpf10n50cf.pdf Size:987K _fairchild_semi

FQP10N20C
FQP10N20C

December 2006 TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge (typical 43 nC) DMOS technology. • Low Crss (typical 16pF) This advanced technology has been espe

4.2. fqp10n60c fqpf10n60c.pdf Size:1122K _fairchild_semi

FQP10N20C
FQP10N20C

April 2007 ® QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 44 nC) DMOS technology. • Low Crss ( typical 18 pF) This advanced technology has been especiall

Datasheet: FQI8N60C , FDP047AN08A0 , FQL40N50 , FQL40N50F , FQN1N50C , FQN1N60C , FDP3652 , FQNL2N50B , IRF150 , FDB3652 , FQP11N40C , FDP3632 , FQP12P20 , FQP13N06L , FQP13N10 , FDD3682 , FQP13N10L .

Back to Top

 


FQP10N20C
  FQP10N20C
  FQP10N20C
 

social 

LIST

Last Update

MOSFET: SI3850ADV | SI3805DV | SI3590DV | SI3588DV | SI3586DV | SI3585CDV | SI3552DV | SI3499DV | SI3495DV | SI3493DV | SI3493BDV | SI3483DV | SI3483CDV | SI3481DV | SI3477DV |