FQP10N20C Specs and Replacement
Type Designator: FQP10N20C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 72 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO220
FQP10N20C substitution
- MOSFET ⓘ Cross-Reference Search
FQP10N20C datasheet
fqp10n20c fqpf10n20c.pdf
TM QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 40.5 pF) This advanced technology has been especially tailor... See More ⇒
fqp10n20c fqpf10n20c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fqp10n20c.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor FQP10N20C FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMU... See More ⇒
fqp10n20ctstu.pdf
TM QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 40.5 pF) This advanced technology has been especially tailor... See More ⇒
Detailed specifications: FQI8N60C, FDP047AN08A0, FQL40N50, FQL40N50F, FQN1N50C, FQN1N60C, FDP3652, FQNL2N50B, IRF630, FDB3652, FQP11N40C, FDP3632, FQP12P20, FQP13N06L, FQP13N10, FDD3682, FQP13N10L
Keywords - FQP10N20C MOSFET specs
FQP10N20C cross reference
FQP10N20C equivalent finder
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FQP10N20C substitution
FQP10N20C replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: BUK654R6-55C | FQNL2N50B
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