FQP10N20C PDF and Equivalents Search

 

FQP10N20C Specs and Replacement

Type Designator: FQP10N20C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 72 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO220

FQP10N20C substitution

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FQP10N20C datasheet

 ..1. Size:875K  fairchild semi
fqp10n20c fqpf10n20c.pdf pdf_icon

FQP10N20C

TM QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 40.5 pF) This advanced technology has been especially tailor... See More ⇒

 ..2. Size:821K  onsemi
fqp10n20c fqpf10n20c.pdf pdf_icon

FQP10N20C

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 ..3. Size:207K  inchange semiconductor
fqp10n20c.pdf pdf_icon

FQP10N20C

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FQP10N20C FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMU... See More ⇒

 0.1. Size:873K  fairchild semi
fqp10n20ctstu.pdf pdf_icon

FQP10N20C

TM QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 40.5 pF) This advanced technology has been especially tailor... See More ⇒

Detailed specifications: FQI8N60C, FDP047AN08A0, FQL40N50, FQL40N50F, FQN1N50C, FQN1N60C, FDP3652, FQNL2N50B, IRF630, FDB3652, FQP11N40C, FDP3632, FQP12P20, FQP13N06L, FQP13N10, FDD3682, FQP13N10L

Keywords - FQP10N20C MOSFET specs

 FQP10N20C cross reference

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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