BLP025N10-B Todos los transistores

 

BLP025N10-B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLP025N10-B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 312.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 168 nC
   trⓘ - Tiempo de subida: 66 nS
   Cossⓘ - Capacitancia de salida: 2780 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
   Paquete / Cubierta: TO-263

 Búsqueda de reemplazo de MOSFET BLP025N10-B

 

BLP025N10-B Datasheet (PDF)

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 blp025n10-b blp025n10-p.pdf

BLP025N10-B BLP025N10-B

BLP025N10 MOSFET Step-Down Converter 1Description , BLP025N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

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 blp024n10-ba blp024n10-t.pdf

BLP025N10-B BLP025N10-B

BLP024N10 MOSFET Step-Down Converter , 1Description BLP024N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

 9.2. Size:988K  belling
 blp021n10-t.pdf

BLP025N10-B BLP025N10-B

BLP021N10 MOSFET Step-Down Converter 1Description , BLP021N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

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 blp023n10-b blp023n10-p.pdf

BLP025N10-B BLP025N10-B

BLP023N10 MOSFET Step-Down Converter 1Description , BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

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 blp02n08-b blp02n08-p.pdf

BLP025N10-B BLP025N10-B

BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

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 blp02n08-t.pdf

BLP025N10-B BLP025N10-B

BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 9.6. Size:997K  belling
 blp023n10-t.pdf

BLP025N10-B BLP025N10-B

BLP023N10 MOSFET Step-Down Converter 1Description , BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

 9.7. Size:995K  belling
 blp028n10-b blp028n10-p.pdf

BLP025N10-B BLP025N10-B

BLP028N10 MOSFET Step-Down Converter 1Description , BLP028N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

 9.8. Size:987K  belling
 blp023n10-ba.pdf

BLP025N10-B BLP025N10-B

BLP023N10 MOSFET Step-Down Converter 1Description , BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

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 blp022n10-ba.pdf

BLP025N10-B BLP025N10-B

BLP022N10 MOSFET Step-Down Converter 1Description , BLP022N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

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 blp02n08-f.pdf

BLP025N10-B BLP025N10-B

BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

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 blp02n06-t.pdf

BLP025N10-B BLP025N10-B

BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter

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 blp02n06-d.pdf

BLP025N10-B BLP025N10-B

BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter

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 blp02n06l-d.pdf

BLP025N10-B BLP025N10-B

BLP02N06L MOSFET Step-Down Converter , 1Description BLP02N06L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet

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 blp02n06l-q.pdf

BLP025N10-B BLP025N10-B

BLP02N06L MOSFET Step-Down Converter , 1Description BLP02N06L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet

 9.15. Size:941K  belling
 blp02n06-p.pdf

BLP025N10-B BLP025N10-B

BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter

 9.16. Size:985K  belling
 blp02n08-ba.pdf

BLP025N10-B BLP025N10-B

BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 9.17. Size:693K  belling
 blp02n06-q.pdf

BLP025N10-B BLP025N10-B

BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SFR9024TM | DMN3730UFB4

 

 
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History: SFR9024TM | DMN3730UFB4

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