BLP025N10-B Specs and Replacement
Type Designator: BLP025N10-B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 312.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 66 nS
Cossⓘ -
Output Capacitance: 2780 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: TO-263
- MOSFET ⓘ Cross-Reference Search
BLP025N10-B datasheet
..1. Size:993K belling
blp025n10-b blp025n10-p.pdf 
BLP025N10 MOSFET Step-Down Converter 1 Description , BLP025N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10... See More ⇒
9.1. Size:1104K belling
blp024n10-ba blp024n10-t.pdf
BLP024N10 MOSFET Step-Down Converter , 1 Description BLP024N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10... See More ⇒
9.2. Size:988K belling
blp021n10-t.pdf
BLP021N10 MOSFET Step-Down Converter 1 Description , BLP021N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10... See More ⇒
9.3. Size:948K belling
blp023n10-b blp023n10-p.pdf
BLP023N10 MOSFET Step-Down Converter 1 Description , BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10... See More ⇒
9.4. Size:975K belling
blp02n08-b blp02n08-p.pdf
BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒
9.5. Size:752K belling
blp02n08-t.pdf
BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V ... See More ⇒
9.6. Size:997K belling
blp023n10-t.pdf
BLP023N10 MOSFET Step-Down Converter 1 Description , BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10... See More ⇒
9.7. Size:995K belling
blp028n10-b blp028n10-p.pdf
BLP028N10 MOSFET Step-Down Converter 1 Description , BLP028N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10... See More ⇒
9.8. Size:987K belling
blp023n10-ba.pdf
BLP023N10 MOSFET Step-Down Converter 1 Description , BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10... See More ⇒
9.9. Size:960K belling
blp022n10-ba.pdf
BLP022N10 MOSFET Step-Down Converter 1 Description , BLP022N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10... See More ⇒
9.10. Size:953K belling
blp02n08-f.pdf
BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒
9.11. Size:727K belling
blp02n06-t.pdf
BLP02N06 MOSFET Step-Down Converter , 1 Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter... See More ⇒
9.12. Size:1112K belling
blp02n06-d.pdf
BLP02N06 MOSFET Step-Down Converter , 1 Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter... See More ⇒
9.13. Size:1115K belling
blp02n06l-d.pdf
BLP02N06L MOSFET Step-Down Converter , 1 Description BLP02N06L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet... See More ⇒
9.14. Size:694K belling
blp02n06l-q.pdf
BLP02N06L MOSFET Step-Down Converter , 1 Description BLP02N06L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet... See More ⇒
9.15. Size:941K belling
blp02n06-p.pdf
BLP02N06 MOSFET Step-Down Converter , 1 Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter... See More ⇒
9.16. Size:985K belling
blp02n08-ba.pdf
BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒
9.17. Size:693K belling
blp02n06-q.pdf
BLP02N06 MOSFET Step-Down Converter , 1 Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter... See More ⇒
Detailed specifications: BLP021N10-T, BLP022N10-BA, BLP023N10-B, BLP023N10-BA, BLP023N10-P, BLP023N10-T, BLP024N10-BA, BLP024N10-T, 7N65, BLP025N10-P, BLP028N10-B, BLP028N10-P, BLP02N06-D, BLP02N06L-D, BLP02N06L-Q, BLP02N06-P, BLP02N06-Q
Keywords - BLP025N10-B MOSFET specs
BLP025N10-B cross reference
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