BLP02N08-F Todos los transistores

 

BLP02N08-F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLP02N08-F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 595.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 122 nS
   Cossⓘ - Capacitancia de salida: 2350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
   Paquete / Cubierta: TO247
 

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BLP02N08-F Datasheet (PDF)

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BLP02N08-F

BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 5.1. Size:975K  belling
 blp02n08-b blp02n08-p.pdf pdf_icon

BLP02N08-F

BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 5.2. Size:752K  belling
 blp02n08-t.pdf pdf_icon

BLP02N08-F

BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 5.3. Size:985K  belling
 blp02n08-ba.pdf pdf_icon

BLP02N08-F

BLP02N08 MOSFET Step-Down Converter 1Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

MOSTRAR MÁS

Otros transistores... BLP02N06-D , BLP02N06L-D , BLP02N06L-Q , BLP02N06-P , BLP02N06-Q , BLP02N06-T , BLP02N08-B , BLP02N08-BA , SPP20N60C3 , BLP02N08-P , BLP02N08-T , BLP032N06-Q , BLP032N08-T , BLP036N08-B , BLP036N08-D , BLP036N08-P , BLP038N10GL-B .

History: PDC2603Z | FDS8874 | S85N042RP | NCE60P25 | UTT60P03 | BSC014N04LSI | CHM3413KGP

 

 
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