BLP02N08-F Specs and Replacement

Type Designator: BLP02N08-F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 595.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 122 nS

Cossⓘ - Output Capacitance: 2350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: TO247

BLP02N08-F substitution

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BLP02N08-F datasheet

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BLP02N08-F

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒

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BLP02N08-F

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒

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 blp02n08-t.pdf pdf_icon

BLP02N08-F

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V ... See More ⇒

 5.3. Size:985K  belling
 blp02n08-ba.pdf pdf_icon

BLP02N08-F

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V... See More ⇒

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Detailed specifications: BLP02N06-D, BLP02N06L-D, BLP02N06L-Q, BLP02N06-P, BLP02N06-Q, BLP02N06-T, BLP02N08-B, BLP02N08-BA, K3569, BLP02N08-P, BLP02N08-T, BLP032N06-Q, BLP032N08-T, BLP036N08-B, BLP036N08-D, BLP036N08-P, BLP038N10GL-B

Keywords - BLP02N08-F MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs