BLP036N08-P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLP036N08-P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 192.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 1184 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm

Encapsulados: TO-220

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BLP036N08-P datasheet

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 blp036n08-p blp036n08-b.pdf pdf_icon

BLP036N08-P

BLP036N08 MOSFET Step-Down Converter , 1 Description BLP036N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Para

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 blp036n08-d.pdf pdf_icon

BLP036N08-P

BLP036N08 MOSFET Step-Down Converter , 1 Description BLP036N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Para

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 blp03n10-ba blp03n10-t.pdf pdf_icon

BLP036N08-P

BLP03N10 MOSFET Step-Down Converter , 1 Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100

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 blp039n08-q.pdf pdf_icon

BLP036N08-P

BLP039N08 MOSFET Step-Down Converter , 1 Description BLP039N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet

MOSTRAR MÁS

Otros transistores... BLP02N08-BA, BLP02N08-F, BLP02N08-P, BLP02N08-T, BLP032N06-Q, BLP032N08-T, BLP036N08-B, BLP036N08-D, AON7410, BLP038N10GL-B, BLP038N10GL-D, BLP038N10GL-P, BLP038N15-T, BLP039N08-B, BLP039N08-D, BLP039N08-P, BLP039N08-Q