Справочник MOSFET. BLP036N08-P

 

BLP036N08-P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BLP036N08-P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 192.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 72 nC
   trⓘ - Время нарастания: 80 ns
   Cossⓘ - Выходная емкость: 1184 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0036 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для BLP036N08-P

 

 

BLP036N08-P Datasheet (PDF)

 ..1. Size:997K  belling
blp036n08-p blp036n08-b.pdf

BLP036N08-P
BLP036N08-P

BLP036N08 MOSFET Step-Down Converter , 1Description BLP036N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Para

 4.1. Size:955K  belling
blp036n08-d.pdf

BLP036N08-P
BLP036N08-P

BLP036N08 MOSFET Step-Down Converter , 1Description BLP036N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Para

 9.1. Size:1099K  belling
blp03n10-ba blp03n10-t.pdf

BLP036N08-P
BLP036N08-P

BLP03N10 MOSFET Step-Down Converter , 1Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100

 9.2. Size:998K  belling
blp039n08-q.pdf

BLP036N08-P
BLP036N08-P

BLP039N08 MOSFET Step-Down Converter , 1Description BLP039N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet

 9.3. Size:959K  belling
blp03n10-f.pdf

BLP036N08-P
BLP036N08-P

BLP03N10 MOSFET Step-Down Converter , 1Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100

 9.4. Size:958K  belling
blp039n08-d.pdf

BLP036N08-P
BLP036N08-P

BLP039N08 MOSFET Step-Down Converter , 1Description BLP039N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Par

 9.5. Size:1008K  belling
blp039n08-p blp039n08-b.pdf

BLP036N08-P
BLP036N08-P

BLP039N08 MOSFET Step-Down Converter , 1Description BLP039N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet

 9.6. Size:963K  belling
blp03n10-b blp03n10-p.pdf

BLP036N08-P
BLP036N08-P

BLP03N10 MOSFET Step-Down Converter , 1Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100

 9.7. Size:967K  belling
blp03n08-f.pdf

BLP036N08-P
BLP036N08-P

BLP03N08 MOSFET Step-Down Converter , 1Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 9.8. Size:1099K  belling
blp03n08-ba blp03n08-t.pdf

BLP036N08-P
BLP036N08-P

BLP03N08 MOSFET Step-Down Converter , 1Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 9.9. Size:737K  belling
blp038n15-t.pdf

BLP036N08-P
BLP036N08-P

BLP038N15 MOSFET Step-Down Converter 1Description , BLP038N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high current applications. KEY CHARACTERISTICS Parameter Value Unit V 150

 9.10. Size:938K  belling
blp038n10gl-d.pdf

BLP036N08-P
BLP036N08-P

BLP038N10GL MOSFET Step-Down Converter , 1Description BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Par

 9.11. Size:1005K  belling
blp032n08-t.pdf

BLP036N08-P
BLP036N08-P

BLP032N08 MOSFET Step-Down Converter 1Description , BLP032N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85

 9.12. Size:976K  belling
blp03n08-b blp03n08-p.pdf

BLP036N08-P
BLP036N08-P

BLP03N08 MOSFET Step-Down Converter , 1Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 9.13. Size:1003K  belling
blp038n10gl-p blp038n10gl-b.pdf

BLP036N08-P
BLP036N08-P

BLP038N10GL MOSFET Step-Down Converter , 1Description BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS

 9.14. Size:834K  belling
blp032n06-q.pdf

BLP036N08-P
BLP036N08-P

BLP032N06 MOSFET Step-Down Converter , 1Description BLP032N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top