BLP04N10-P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLP04N10-P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 208 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 1594 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de BLP04N10-P MOSFET
- Selecciónⓘ de transistores por parámetros
BLP04N10-P datasheet
blp04n10-b blp04n10-p.pdf
BLP04N10 MOSFET Step-Down Converter , 1 Description BLP04N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100
blp04n08-b blp04n08-p.pdf
BLP04N08 MOSFET Step-Down Converter 1 Description , BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
blp04n08-ba.pdf
BLP04N08 MOSFET Step-Down Converter 1 Description , BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
blp045n10-b blp045n10-p.pdf
BLP045N10 MOSFET 1 Description BLP045N10, the N-channel Enhanced Power Step-Down Converter MOSFETs, is obtained by advanced double trench , technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit
Otros transistores... BLP042N15J-B, BLP042N15J-P, BLP045N10-B, BLP045N10-P, BLP04N08-B, BLP04N08-BA, BLP04N08-P, BLP04N10-B, IRFZ24N, BLP055N09G-B, BLP055N09G-P, BLP055N10-B, BLP055N10-P, BLP05N08G-B, BLP05N08G-P, BLP05N08G-Q, BLP05N15-B
History: AOB66811L
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1 | CRTT067N10N | AP6NA3R2MT | AP65SA145DDT8 | AP4NAR95CMT-A | AP4024GEMT-HF | AP3P050AH
Popular searches
2sc2625 | 2sc1815 transistor | 2sd718 | 2n3053 transistor | 2sc458 replacement | bc557 transistor | 2n3638 | tip127 datasheet
