All MOSFET. BLP04N10-P Datasheet

 

BLP04N10-P MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLP04N10-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 114 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 1594 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-220

 BLP04N10-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLP04N10-P Datasheet (PDF)

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BLP04N10-P BLP04N10-P

BLP04N10 MOSFET Step-Down Converter , 1Description BLP04N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100

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BLP04N10-P BLP04N10-P

BLP04N08 MOSFET Step-Down Converter 1Description , BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

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 blp04n08-ba.pdf

BLP04N10-P BLP04N10-P

BLP04N08 MOSFET Step-Down Converter 1Description , BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

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BLP04N10-P BLP04N10-P

BLP045N10 MOSFET 1Description BLP045N10, the N-channel Enhanced Power Step-Down Converter MOSFETs, is obtained by advanced double trench , technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit

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BLP04N10-P BLP04N10-P

BLP042N15J MOSFET Step-Down Converter 1Description , BLP042N15J, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS a n d h i g h cur r e n t s w i t c h i n g a p p l i c a t i o n s . KEY CHARACTERISTIC

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BLP04N10-P BLP04N10-P

BLP042N10G MOSFET Step-Down Converter , 1Description BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Pa

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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