FQP17P10 Todos los transistores

 

FQP17P10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQP17P10

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 16.5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 30 nC

Resistencia drenaje-fuente RDS(on): 0.19 Ohm

Empaquetado / Estuche: TO220

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FQP17P10 Datasheet (PDF)

1.1. fqp17p10.pdf Size:668K _fairchild_semi

FQP17P10
FQP17P10

TM QFET FQP17P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -16.5A, -100V, RDS(on) = 0.19? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has been especially tailored to Fast switchin

4.1. fqp17p06.pdf Size:685K _fairchild_semi

FQP17P10
FQP17P10

May 2001 TM QFET FQP17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -17A, -60V, RDS(on) = 0.12? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especially tailored to Fast swi

 5.1. fqp17n08.pdf Size:605K _fairchild_semi

FQP17P10
FQP17P10

January 2001 TM QFET QFET QFET QFET FQP17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 16.5A, 80V, RDS(on) = 0.115Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 28 pF) This advanced technology has been

5.2. fqp17n40.pdf Size:728K _fairchild_semi

FQP17P10
FQP17P10

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16A, 400V, RDS(on) = 0.27? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially ta

 5.3. fqp17n08l.pdf Size:563K _fairchild_semi

FQP17P10
FQP17P10

December 2000 TM QFET QFET QFET QFET FQP17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 16.5A, 80V, RDS(on) = 0.1Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 29 pF) This advanced technology i

Otros transistores... FQP13N10L , FDB16AN08A0 , FQP13N50 , FQP14N30 , FQP16N25 , FQP17N40 , FDD6688 , FQP17P06 , CEP83A3 , FQP19N20 , FQPF13N50C , FQP19N20C , FQPF12N60C , FQP20N06 , FQP20N06L , FQP22N30 , FQP24N08 .

 

 
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