FQP17P10 Todos los transistores

 

FQP17P10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQP17P10

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 16.5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 30 nC

Resistencia drenaje-fuente RDS(on): 0.19 Ohm

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de MOSFET FQP17P10

 

 

FQP17P10 Datasheet (PDF)

1.1. fqp17p10.pdf Size:668K _fairchild_semi

FQP17P10
FQP17P10

TM QFET FQP17P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -16.5A, -100V, RDS(on) = 0.19? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has been especially tailored to Fast switchin

4.1. fqp17p06.pdf Size:685K _fairchild_semi

FQP17P10
FQP17P10

May 2001 TM QFET FQP17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -17A, -60V, RDS(on) = 0.12? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especially tailored to Fast swi

 5.1. fqp17n08.pdf Size:605K _fairchild_semi

FQP17P10
FQP17P10

January 2001 TM QFET QFET QFET QFET FQP17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 16.5A, 80V, RDS(on) = 0.115Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 28 pF) This advanced technology has been

5.2. fqp17n08l.pdf Size:563K _fairchild_semi

FQP17P10
FQP17P10

December 2000 TM QFET QFET QFET QFET FQP17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 16.5A, 80V, RDS(on) = 0.1Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 29 pF) This advanced technology i

 5.3. fqp17n40.pdf Size:728K _fairchild_semi

FQP17P10
FQP17P10

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16A, 400V, RDS(on) = 0.27? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially ta

Otros transistores... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

Back to Top

 


FQP17P10
  FQP17P10
  FQP17P10
  FQP17P10
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: QS8M51 | QS8M13 | QS8M11 | QS8K21 | QS8K2 | QS8K13 | QS8K11 | QS8J5 | QS8J4 | QS8J2 | QS8J13 | QS8J12 | QS8J11 | QS8F2 | QS6U24 |

 

 

Back to Top