FQP17P10 Datasheet. Specs and Replacement

Type Designator: FQP17P10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO220

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FQP17P10 datasheet

 ..1. Size:668K  fairchild semi
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FQP17P10

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 8.1. Size:685K  fairchild semi
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FQP17P10

May 2001 TM QFET FQP17P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -17A, -60V, RDS(on) = 0.12 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 80 pF) This advanced technology has been especially tailored t... See More ⇒

 8.2. Size:817K  cn vbsemi
 fqp17p06.pdf pdf_icon

FQP17P10

FQP17P06 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) ( ) TrenchFET Power MOSFET ID (A) Qg (Typ) 100 % UIS Tested 0.062 at VGS = - 10 V - 20 - 60 12.5 0.074 at VGS = - 4.5 V - 15 APPLICATIONS Load Switch S TO-220AB G D G D S Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter S... See More ⇒

 9.1. Size:605K  fairchild semi
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FQP17P10

January 2001 TM QFET QFET QFET QFET FQP17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.115 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 28 pF) This advanced technology has been... See More ⇒

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Detailed specifications: FQP13N10L, FDB16AN08A0, FQP13N50, FQP14N30, FQP16N25, FQP17N40, FDD6688, FQP17P06, SPP20N60C3, FQP19N20, FQPF13N50C, FQP19N20C, FQPF12N60C, FQP20N06, FQP20N06L, FQP22N30, FQP24N08

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