BLS65R041F-F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLS65R041F-F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 590 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 46 nS

Cossⓘ - Capacitancia de salida: 790 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm

Encapsulados: TO-247

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BLS65R041F-F datasheet

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 bls65r041f-f bls65r041f-w.pdf pdf_icon

BLS65R041F-F

BLS65R041F Power MOSFET 1 Description Step-Down Converter BLS65R041F, the silicon N-channel , Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit

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 bls65r165-p bls65r165-a bls65r165-i bls65r165-b bls65r165-w.pdf pdf_icon

BLS65R041F-F

BLS65R165 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS65R165, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

 8.2. Size:632K  belling
 bls65r380-p bls65r380-a bls65r380-u bls65r380-d bls65r380-b.pdf pdf_icon

BLS65R041F-F

BLS65R380 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS65R380, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

 8.3. Size:604K  belling
 bls65r560-p bls65r560-a bls65r560-u bls65r560-d.pdf pdf_icon

BLS65R041F-F

BLS65R560 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS65R560, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

MOSTRAR MÁS

Otros transistores... BLS60R380F-B, BLS60R380F-D, BLS60R380F-P, BLS60R380F-U, BLS60R520-A, BLS60R520-D, BLS60R520-P, BLS60R520-U, SPP20N60C3, BLS65R041F-W, BLS65R165-A, BLS65R165-B, BLS65R165-I, BLS65R165-P, BLS65R165-W, BLS65R380-A, BLS65R380-B