BLS65R041F-F MOSFET. Datasheet pdf. Equivalent
Type Designator: BLS65R041F-F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 590 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 161 nC
trⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 790 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: TO-247
BLS65R041F-F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLS65R041F-F Datasheet (PDF)
bls65r041f-f bls65r041f-w.pdf
BLS65R041F Power MOSFET 1Description Step-Down Converter BLS65R041F, the silicon N-channel , Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit
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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 3SK113F
History: 3SK113F
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